UV/O3 generated graphene nanomesh: Formation mechanism, properties, and FET studies

Journal of Physical Chemistry C

Volumn 118, Issue 1, 2014, Pages 725-731

  Yang, Da Peng ^a,b   Wang, Xiansong ^a,b   Guo, Xiaojun ^b   Zhi, Xiao ^a,b   Wang, Kan ^a   Li, Chao ^a,b   Huang, Gaoshan ^b   Shen, Guangxia ^a,b   Mei, Yongfeng ^c   Cui, Daxiang ^a,b  

^a Shanghai Jiao Tong University   (China)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

^c FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENGINEERING; BIOMEDICAL APPLICATIONS; ELECTRICAL CHARACTERISTIC; FIELD EFFECT TRANSISTOR (FETS); FORMATION MECHANISM; GRAPHENE OXIDES; NANOPOROUS NETWORKS; REACTIVE OXYGEN SPECIES;

ATOMIC FORCE MICROSCOPY; BIOMEDICAL ENGINEERING; ELECTRIC PROPERTIES; ELECTRONIC MEDICAL EQUIPMENT; ENERGY GAP; FIELD EFFECT TRANSISTORS; MEDICAL APPLICATIONS;

GRAPHENE;

EID: 84892601240     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp409898d     Document Type: Article

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