Millimeter-wave integrated circuits

Millimeter-Wave Integrated Circuits

Volumn , Issue , 2005, Pages 1-268

  Carey, Eoin ^a   Lidholm, Sverre ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84891982316     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1007/b102136     Document Type: Book

References (95)

1. T. Jackson, "A Novel System for Providing Broadband Multimedia Services to the Home - The Mesh Network", Microwaves & RF 98 Conference Proceedings, Wembley, London, pp. 86-91, Sept. 1998.
2. H. H. Meinel, "The Market for Short-Haul Line-of Sight Millimeter Wave Transmission Links", IEEE MTT-S International Microwave Symposium Digest, San Francisco, 1996, pp. 487-489.
3. http://www.bookham.com/rf/about-caswel1.htm.
4. S. M. Sze, "Physics of Semiconductor Devices", 2nd Edition, John Wiley & Sons, Inc., New York, 1981, ISBN 0-471-05661-8.
5. R. S. Muller, T. I. Kamins, "Device Electronics for Integrated Circuits", 2nd Edition, John Wiley & Sons, Inc., New York, 1986, ISBN 0471887587.
6. S. A. Maas, "Microwave Mixers", Artech House, Inc., Dedham, MA, 1986, ISBN 0- 89006-171-8.
7. S. I. Long, S. E. Butner, "Gallium Arsenide Digital Integrated Circuit Design", McGraw- Hill Publishing Company, 1990, ISBN 0070386889.
8. D. K. Ferry, "Gallium Arsenide Technology"', Howard W. Sams & Co., Inc., Indianapolis, 1985, ISBN 0-672-22375-9.
9. G. D. Vendelin, A. M. Pavio, U. L. Rohde, "Microwave Circuit Design Using Linear and Nonlinear Techniques", John Wiley & Sons, Inc., New York, 1990, ISBN 0-471-60276- 0.
10. D. Pavlidis, "HBT vs. PHEMT vs. MESFET: What's best and why", International Conference on GaAs Manufacturing Technology (MANTECH), Vancouver, BC, Canada, May 1999, (http:Nwww.gaasmantech.org/digest/l999/42.html).
11. D. Greenberg, S. Sweeney, G. Freeman, D. Ahlgren, "Low-Noise Performance Near BVCEO in a 200 GHz SiGe Technology at Different Collector Design Points", IEEE MTT-S International Microwave Symposium Digest, Philadelphia, PA, 2003, pp. 113- 116.
12. R. S. Pengelly, "Microwave Field Effect Transistors - Theory, Design and Applications", Second Edition, Research Studies Press Ltd., 1986, ISBN 0-86380-040-8.
13. J. L. Hudgins, "Wide and Narrow Bandgap Semiconductors for Power Electronics: A New Valuation", Journal of Electronic Materials, Vol. 32, No. 6, pp. 471-477, June 2003.
14. S. M. Sze, "High Speed Semiconductor Devices", John Wiley & Sons, Inc., New York, 1990, ISBN 0-471-62307-5.
15. F. Ali, I. Bahl, A. Gupta, "Microwave and Millimeter-Wave Heterostructure Transistors and their Applications", Artech House, Inc., Norwood, MA, 1989, ISBN 0-89006-372-9.
16. M. S. Tyagi, "Introduction to Semiconductor Materials and Devices", John Wiley & Sons, Inc., New York, 1991, IBSN 0-471-60560-3.
17. M. Shur, "Introduction to Electronic Devices", John Wiley & Sons, Inc., New York, 1996, ISBN 0-471-10348-9.
18. M. Shur, "GaAs Devices and Circuits", Plenum Press, New York, 1987, ISBN 0-306- 42192-5.
19. Picoprobe by GGB Industries, Inc., http://www.ggb.com/index.html.
20. Kopin Corporation, http://www.kopin.com.
21. 0.71,As layer on gas: A New Structure for High Performance High Electron Mobility Transistor Realization", Appl. Phys. Lett., Vol. 61, p 922, 1992.
22. J. J. Liou, "Principles and Analysis of AlGaAsIGaAs Heterojunction Bipolar Transistors", Artech House, Boston, 1996, ISBN 0-89006-587-X.
23. S. M. Sze, "Modern Semiconductor Device Physics", John Wiley & Sons, Inc., New York, 1998, ISBN 0-471-15237-4.
24. H. A. Bethe, "Theory of the Boundary Layer of Crystal Rectifiers", MIT Radiation Lab. Tech. Report 43-12, 1942.
25. W. Schottky, "Halbleitertheorie der Sperrschicht", Naturwissenschaften, 26, 843, 1938.
26. C. R. Crowell and S. M. Sze, "Current Transport in Metal-Semiconductor Barriers", Solid State Electron, 9, pp. 1035-1047, 1966.
27. http://eesof.tm.agilent.com/products/adsoview.html.
28. Y. C. Wang, M. Hong, J. M. Kuo, J. P. Mannaerts, J. Kwo, H. S. Tsai, J. J. Krajewski, Y. K. Chen, A. Y. Cho, "Demonstration of Submicron Depletion-Mode GaAs MOSFET's with Negligible Drain Current Drift and Hysteresis", IEEE Electron Device Letters, Vol. 20, No. 9, pp. 457-459, Sept. 1999.
29. I. Angelov, H. Zirath, N. Rorsman, "A New Empirical Nonlinear Model for HEMT and MESFET Devices", IEEE Trans. Microwave Theory Tech., Vol. MTT-40, No. 12, pp. 2258-2266, Dec. 1992.
30. N.I. Cameron, M.R.S. Taylor, H. McLelland, M. Holland, I.G. Thayne, K. Elgaid, S.P. Beaumont "A High Performance, High Yield, Dry-Etched, Pseudomorphic HEMT for W Band Use", IEEE MTT-S International Microwave Symposium Digest, Orlando, 1995, pp. 435-438.
31. Ishikawa, K. Nishii, T. Matsuno, C. Azuma, Y. Ikeda, S. Nanbu, K. Inoue, "Low- Noise InGaAs HEMT Using the New Off-Set Recess Gate Process", IEEE MTT-S International Microwave Symposium Digest, Long Beach, 1989, pp. 979-982.
32. K.H.G. Duh, P.C. Chao, P. Ho, M.Y. Kao, P.M. Smith, J.M. Ballingall, A.A. Jabra, "High-Performance InP-based Millimeter-wave Low-Noise Amplifiers", IEEE MTT-S International Microwave Symposium Digest, Long Beach, 1989, pp. 805-808.
33. C.A. Liechti, "Heterostructure Microwave Transistors for Ultra-High Speed Electronics", European Microwave Conference Proceedings, Stockholm, 1988, pp. 92-100.
34. 1-x(0.3< x < 0.6) HEMT's on GaAs Substrate", IEEE Trans. Microwave Theory Tech., Vol. MTT-45, No. 10, pp. 2089-2095, Oct. 1998.
35. http:Nwww.gaas.netlnews/Pico~lO97.html.
36. D.A. Divekar, "FET Modeling for Circuit Simulation", Kluwer Academic Publishers, 1988, ISBN 0898382645.
37. W. Curtice, "A MESFET Model for use in the Design of GaAs Integrated Circuits", IEEE Trans. Microwave Theory Tech., Vol. MTT-28, No. 5, pp. 448-455, May 1980.
38. Materka, T. Kacprzak, "Computer calculation of Large-Signal GaAs FET Amplifier Characteristics", IEEE Trans. Microwave Theory Tech., Vol. MTT-33, No. 2, pp. 129- 134, Feb. 1985.
39. H. Statz, P. Newman, "GaAs FET Device and Circuit Simulation in SPICE, IEEE Trans. Electron Devices, ED-34, 1987, pp. 160-166.
40. H. Kroemer, "Theory of a Wide-Gap Emitter for Transistors", Proc. IRE, Vol. 45, No. 11, pp. 1535-1537, Nov. 1957.
41. B. Lin, "InGaP HBTs Offer Enhanced Reliability", Applied Microwave and Wireless, Noble Publishing, Dec. 2000, pp. 115-116.
42. B. Lin, L. Wang, "InGaP emitters make HBTs more reliable", GaAs Manufacturing, May 2001 (http://www.compoundsemiconductor.net/articles/ magazine/7/5/70/1).
43. http:l/www.cen.uiuc.edu/-gstill/research.html.
44. J-G Kim, D-H Baek, S-H Jeon, J-W Park, S. Hong, "A 60 GHz InGaP/GaAs Push-Push MMIC VCO", IEEE MTT-S International Microwave Symposium Digest, Philadelphia, PA, 2003, pp. 885-888.
45. M. Wetzel, R.A. Johnson, P.F. Chen, B. Xavier, P.R. de la Houssaye, P. M. Asbeck, J. Lagnado, "Prospects of CMOS Power Amplifiers on Thin Film SOS for Wireless Applications", First Annual UCSD Conference on Wireless Communications, San Diego, CA, Mar. 1998 (http:Nsigma.ucsd.edu/-mwetzell).
46. J. Yue, J. Kriz, "SO1 CMOS Technology for RF System-On-Chip Applications", Microwave Journal, Horizon House Publications, Jan. 2002.
47. L. P. B. Katehi, G. M. Rebeiz, and C. T.-C. Nguyen, "MEMS and Si-micromachined components for low-power, high-frequency communications systems (invited), " IEEE MTT-S International Microwave Symposium Digest, Baltimore, June 1998, pp. 331-333.
48. http://www.ums-gaas.com/.
49. E. O'Ciardha, P. Duffy, D. Vizard, B. Lyons, M. Fehilly, S. Lidholm, "MMIC Circuit Developments for Millimetre-Wave Applications", Microwaves & RF Conference Proceedings, Wembley, London, Sept. 1998.
50. K.H.G.Duh, P.-C. Chao, P.M. Smith, L.F. Lester, B.R. Lee, J.M. Ballingall, M.-Y. Kao, "High-Performance Ka-Band and V-Band HEMT Low-Noise Amplifiers", IEEE Trans. Microwave Theory Tech., Vol. MTT-36, No. 12, pp. 1598-1603, Dec. 1988.
51. G. Gonzalez, "Microwave Transistor Ampl@er Analysis and Design", Prentice-Hall, Englewood Cliffs, N.J., 1996, ISBN 0132543354.
52. E. O'Ciardha, P. Duffy, B. Lyons, M. Fehilly, S. Lidholm, "Fully Integrated Mmwave Radio Transceiver", ESA Workshop on Mm-wave Technology Applications, Helsinki, pp. 196-201, May 1998.
53. E. O'Ciardha, P. Duffy, D. Vizard, B. Lyons, M. Fehilly, S. Lidholm, "MMIC Circuit Developments for Millimetre-Wave Applications", European Microwave Conference Proceedings, Amsterdam, Oct. 1998, pp 58-63.
54. B. N. Lyons, E. O'Ciardha, P. Duffy, M. Fehilly, S. Cremin. "Design and Evaluation of a 60 GHz MMIC", IEE Colloquium on MM-Wave Circuits and Technology for Commercial Applications, London, March 1999, pp. 411-416.
55. H.A. Haus, R.B. Adler, "Circuit Theory of Linear Noisy NetworW, MIT Press, Cambridge, MA, 1959, ISBN 0262080079.
56. http://www.rogers-corp.com/mwu/pdf/5000data.pdf.
57. W.M. Kelly, G.T. Wrixon, "Conversion Losses in Schottky-Barrier Diode Mixers in the Submillimeter Region", IEEE Trans. Microwave Theory Tech., Vol. MTT-27, No. 7, p. 665-672, July 1979.
58. M. Schefer, U. Lott, H. Benedickter, Hp. Meier, W. Patrick, and W. Bgchtold, "Active Monolithically Integrated Coplanar V-Band Mixer", IEEE MTT-S International Microwave Symposium Digest, 1997, Denver, pp. 1043-1046.
59. I. D. Robertson, "MMIC Design", Institution of Electrical Engineers, 1995, ISBN 0852968 167.
60. J.P. Viaud, "Modular Millimetre-wave transceiver design for today's digital radio links", Microwave Engineering Europe, Feb 99.
61. J. Mizoe, T. Matsumura, K. Unosawa, Y. Akiba, K. Nagai, H. Sato, T. Saryo, T. Inoue, "A V-Band GaAs MMIC Chip Set on a Highly Reliable WsiIAu Refractory Gate Process", IEEE MTT-S International Microwave Symposium Digest, 1997, Denver, pp. 247-250.
62. T.J. Ellis, "A Planar Circuit Design for High Order Sub-Harmonic Mixers", IEEE MTT-S International Microwave Symposium Digest, 1997, Denver, pp. 1039- 1042.
63. A. Dearn (GMMT), Private communication, 1997.
64. D. I. Kim, G.-S. Yang, "Design of New Hybrid Ring Directional Coupler Using h/8 or h 16 Sections", IEEE Trans. Microwave Theory Tech., Vol. MTT-39, No. 10, pp. 1779- 1784, Oct. 1991.
65. Gopinath, J.B. Rankin, "Single-gate MESFET frequency doublers", IEEE Trans. Microwave Theory Tech., Vol. MTT-30, No. 6, pp. 869-875, June 1982.
66. S.A. Maas, "Nonlinear Microwave Circuits", Artech House, 2003, ISBN 1580534848.
67. H. Zirath, I. Angelov, N. Rorsman, C. Karlsson, E. Kollberg, "A Balanced W-Band HFET Doubler", European Microwave Conference Proceedings, Madrid, 1993, pp. 837- 839.
68. J.S. Augusto, M.J. Rosario, J.C. Vaz, J.C. Freire, "Optimal Design of MESFET Frequency Multipliers", European Microwave Conference Proceedings, Madrid, 1993, pp. 402-404.
69. R. Gilmore, "Octave-Bandwidth Microwave FET Doubler", Electronics Letters, Vol. 21, No. 12, pp. 532-533, 6th June 1985.
70. T.Hirota, H. Ogawa, "Uniplanar Monolithic Frequency Doublers", IEEE Trans. Microwave Theory Tech., Vol. MTT-37, No. 8, pp. 1249-1254, Aug. 1989.
71. H. Fudem, E.C. Niehenke, "Novel Millimeter Wave Active MMIC Triplers", IEEE MTTS International Microwave Symposium Digest, Baltimore, 1998, pp. 387-390.
72. E. O'Ciardha, S. Lidholm, B. Lyons, "Generic Device Frequency Multiplier Analysis - A Unified Approach", IEEE Trans. Microwave Theory Tech., Vol. MTT-48, No. 7, pp. 1134-1 141, July 2000.
73. K. Yhland, "FET Mixers and Nonlinear FET Models for Intermodulation Analysis", Technical Report No. 287L, Chalmers University of Technology, 1998.
74. I. Angelov, "Chalmers Nonlinear HEMT and MESFET Model - extraction procedure: Part A, Extraction of the current part of the model", Department of Microwave Technology Report No. 25, Chalmers University of Technology, July 1996.
75. E. O'Ciardha, J. Lynch, B. Lyons, S. Cremin, S. Lidholm, "Practical mm-Wave pHEMT Frequency Multiplier", International Journal of Infrared and Millimeter Waves, Vol. 23, No. 6, June, 2002.
76. E. O'Ciardha, B.N. Lyons. "100 GHz MMIC Power Source Development Study", International Journal of Infared and Millimeter Waves, Vol. 21, No. 11, November 2000.
77. "100 GHz Monolithic Multipliers and Power Amplifier", Farran Technology Ltd./ESA Contract 15820/01/NL/FM(SC).
78. P.-P. Huang, T.-W. Huang, H. Wang, E. W. Lin, Y. Shu, G. S. Dow, R. Lai, M. Biedenbender, J. H. Elliott, "A 94 GHz 0.35W Power Amplifier Module", IEEE Trans. Microwave Theory Tech., Vol. MTT-45, No. 12, pp. 2418-2423, Dec. 1997.
79. F. Brauchler, J. Papapolymerou, J. East, L. Katehi, "W Band Monolithic Multipliers", IEEE MTT-S International Microwave Symposium Digest, Denver, 1997, pp. 1225-1228.
80. P. Stenger, M. Sarantos, E. Niehenke, H. Fudem, C. Schwerdt, F. Kuss, D. Strack, G. Hall, J. Masti, "A Miniature MMIC One Watt W-Band Solid State Transmitter", IEEE MTT-S International Microwave Symposium Digest, Denver, 1997.
81. E. O'Ciardha, S. Lidholm, "Novel MMIC Frequency Multiplier Configuration", International Journal of Infared and Millimeter Waves, Vol. 21, NO. 7, July 2000.
82. J. Ouellette, "Radio on a Chip Expedites Wireless Web", The Industrial Physicist, pp. 9- 12, Aug. 2000.
83. J. Lyman, "'Radio on a Chip' Debuts", May 2002: http://www.newsfactor.com/perl/story/l7990.html.
84. R. Lai, H. Wang, Y. C. Chen, T. Block, P. H. Liu, D. C. Streit, D. Tran, P. Siegel, M. Barsky, W. Jones, T. Gaier, "D-band MMIC LNAs with 12 dB gain at 155 GHz fabricated on a high yield InP HEMT MMIC production process", International Conference on Indium Phosphide and Related Materials, New York, 1997, pp. 241 -244.
85. E. O'Ciardha, J. Lynch, B. Lyons, P. Duffy, S. Cremin, S. Lidholm, "Low Noise mm- Wave Amplifier Design Methodology", International Journal of Infrared and Millimeterwaves, Vol. 22, No. 12, Dec. 2001.
86. E. O'Ciardha, J. Lynch, B. Lyons, P. Duffy, S. Cremin, S. Lidholm, "Novel Design Approach for mm-Wave Low Noise Amplifier", Irish Signals and Systems Conference Proceedings, University College Cork, June 2002, pp. 161-165.
87. K. W. Kobayashi, A. K. Oki, D. K. Umemoto, T. R. Block, "A Novel Monolithic HEMTHBT Ka-band VCO-Mixer Design", IEEE MTT-S International Microwave Symposium Digest, 1997, Denver, pp. 83-86.
88. K. Wang, R. Lai, L. Tran, J. Cowles, Y. C. Chen, E. W. Lin, H. H. Liao, M. K. Ke, T. Block, H. C. Yen, "A Single-Chip 94-GHz Frequency Source Using InP-Based HEMTHBT Integration Technology", IEEE MTT-S International Microwave Symposium Digest, Baltimore, June 1998, pp. 219-222.
89. P. Greiling, "HRL Technology Overview", Presented at the National Microelectronics Research Centre, Cork, Ireland, Sept. 1998.
90. University of Florida: http://www.mse.ufl.edu/-speadrecentgapersl.
91. KSU: http://www.phys.ksu.edu/area~GaNgroup/index.html.
92. U.K. Mishra, L.F. Eastman, "The Toughest Transistor Yet", IEEE Spectrum, May 2002, pp. 28-33.
93. K. Maruhashi, M. Ito, H. Kusamitsu, Y. Morishita, K. Ohata, "RF Performance of a 77 GHz Monolithic CPW Amplifier with Flip-Chip Interconnections", IEEE MTT-S International Microwave Symposium Digest, Baltimore, June 1998, pp. 1095-1098.
94. Endwave - http:Nwww.endwave.com/Flip~Chip.html.
95. HD Communications Corp. - http:Nwww.hdcom.com/vbga.html.