A unified compact model for emerging DG FinFETs and GAA nanowire MOSFETs including long/short-channel and thin/thick-body effects

ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2010, Pages 1725-1728

  Zhou, Xing ^a   Zhu, Guojun ^a   Srikanth, Machavolu K ^a   Lin, Shihuan ^a   Chen, Zuhui ^a   Zhang, Junbin ^a   Wei, Chengqing ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BODY EFFECT; CORE MODEL; FINFETS; MOS-FET; MOSFETS; NANOWIRE MOSFETS; UNIFIED COMPACT MODEL; UNIFIED REGIONAL MODELING;

INTEGRATED CIRCUITS; NANOWIRES;

MOSFET DEVICES;

EID: 78751518225     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2010.5667327     Document Type: Conference Paper

References (4)

1. X. Zhou, et. al., "Unified regional modeling approach to emerging multiple-gate/nanowire MOSFETs," in Proc. ICSICT, 2008, B1.2.
2. R. H. Kingston and S. F. Neustadter, "Calculation of the space charge, electric field, and free carrier concentration at the surface of a semiconductor," J. Appl. Phys., vol. 26, no. 6, pp. 718-720, Jun. 1955.
3. W. Z. Shangguan, et. al., "Surface-potential solution for generic undoped MOSFETs with two gates," IEEE Trans. Electron Devices, vol. 54, no. 1, pp. 169-172, Jan. 2007.
4. G. H. See, "Scalable Compact Modeling for Nanometer CMOS Technology," Ph.D. thesis, Nanyang Technological Univ., 2008.