Process damage free thin-film GaAs solar cells by epitaxial liftoff with GaInP window layer

Solar Energy Materials and Solar Cells

Volumn 50, Issue 1-4, 1998, Pages 163-168

  Yazawa, Y ^a   Minemura, J ^a   Tamura, K ^a   Watahiki, S ^a   Kitatani, T ^a   Warabisako, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

Epitaxial liftoff; GaAs solar cells; GaInP window layer; Thin films

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTROSCOPY; SUBSTRATES; THIN FILMS;

EPITAXIAL LIFTOFF TECHNIQUE; GAS SOURCE MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE SPECTROSCOPY;

SOLAR CELLS;

EID: 0031646979     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(97)00140-2     Document Type: Article

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