GaInP single-junction and GaInP/GaAs two-junction thin-film solar cell structures by epitaxial lift-off

Solar Energy Materials and Solar Cells

Volumn 50, Issue 1-4, 1998, Pages 229-235

  Yazawa, Y ^a   Tamura, K ^a   Watahiki, S ^a   Kitatani, T ^a   Minemura, J ^a   Warabisako, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

GaInP single junction; GaInP GaAs two junction; Solar cell; Thin film

Indexed keywords

ETCHING; FABRICATION; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; THIN FILMS;

EPITAXIAL LIFT OFF TECHNIQUE; SINGLE JUNCTION SOLAR CELL;

SOLAR CELLS;

EID: 0031698481     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(97)00152-9     Document Type: Article

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