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Volumn 2, Issue 3, 2013, Pages

Arsenic formation on GaAs during etching in HF solutions: Relevance for the epitaxial lift-off process

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Indexed keywords


EID: 84887433446     PISSN: 21628769     EISSN: 21628777     Source Type: Journal    
DOI: 10.1149/2.006303jss     Document Type: Article
Times cited : (34)

References (31)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.