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Materials Science and Engineering: B

Volumn 95, Issue 3, 2002, Pages 242-248

Influence of radius of curvature on the lateral etch rate of the weight induced epitaxial lift-off process

(6) Voncken, M M A J a Schermer, J J a Maduro, G a Bauhuis, G J a Mulder, P a Larsen, P K a

a RADBOUD UNIVERSITY NIJMEGEN (Netherlands)

Author keywords

Epitaxial lift off; Etching; III V; Radius of curvature; Thin film

Indexed keywords

ETCHING; LIGHT EMITTING DIODES; RATE CONSTANTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; STRAIN; STRESSES; SUBSTRATES; THIN FILM DEVICES; THIN FILMS;

EPITAXIAL LIFT-OFF PROCESSES; SINGLE CRYSTALLINE FILMS;

SINGLE CRYSTALS;

EID: 0036723187 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(02)00240-4 Document Type: Article

Times cited : (46)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.