-
1
-
-
0001088358
-
22.8% efficient silicon solar cell
-
A.W. Blakers, A. Wang, A. M. Milne, J. Zhao, and M. A. Green, "22.8% efficient silicon solar cell," Appl. Phys. Lett., vol. 55, pp. 1363-1365, 1989.
-
(1989)
Appl. Phys. Lett.
, vol.55
, pp. 1363-1365
-
-
Blakers, A.W.1
Wang, A.2
Milne, A.M.3
Zhao, J.4
Green, M.A.5
-
2
-
-
84891626694
-
-
[Online]. Available
-
NIST/SEMATECH e-Handbook of Statistical Methods. (2013, Aug. 27). [Online]. Available: http://www.itl.nist.gov/div898/handbook
-
-
-
-
4
-
-
78650885118
-
Comprehensive analytical model for locally contacted rear surface passivated solar cells
-
A. Wolf, D. Biro, J.-F. Nekarda, S. Stump, A. Kimmerle, S. Mack, and R. Preu, "Comprehensive analytical model for locally contacted rear surface passivated solar cells," J. Appl. Phys., vol. 108, p. 124510, 2010.
-
(2010)
J. Appl. Phys.
, vol.108
, pp. 124510
-
-
Wolf, A.1
Biro, D.2
Nekarda, J.-F.3
Stump, S.4
Kimmerle, A.5
Mack, S.6
Preu, R.7
-
5
-
-
84877288585
-
Validation of analytical modelling of locally contacted solar cells by numerical simulations
-
A. Kimmerle, M. Rüdiger, A. Wolf, M. Hermle, and D. Biro, "Validation of analytical modelling of locally contacted solar cells by numerical simulations," Energy Procedia, vol. 27, pp. 219-226, 2012.
-
(2012)
Energy Procedia
, vol.27
, pp. 219-226
-
-
Kimmerle, A.1
Rüdiger, M.2
Wolf, A.3
Hermle, M.4
Biro, D.5
-
6
-
-
31344436186
-
Analytical model for the diode saturation current of point-contacted solar cells
-
DOI 10.1002/pip.637
-
H. Plagwitz and R. Brendel, "Analytical model for the diode saturation current of point-contacted solar cells," Prog. Photovolt., vol. 14, pp. 1-12, 2006. (Pubitemid 43144123)
-
(2006)
Progress in Photovoltaics: Research and Applications
, vol.14
, Issue.1
, pp. 1-12
-
-
Plagwitz, H.1
Brendel, R.2
-
7
-
-
77955224511
-
Advanced analytical model for the effective recombination velocity of locally contacted surfaces
-
P. Saint-Cast,M. Rüdiger, A.Wolf,M. Hofmann, J. Rentsch, and R. Preu, "Advanced analytical model for the effective recombination velocity of locally contacted surfaces," J. Appl. Phys., vol. 108, p. 013705, 2010.
-
(2010)
J. Appl. Phys.
, vol.108
, pp. 013705
-
-
Saint-Cast, P.1
Rüdiger, M.2
Wolf, A.3
Hofmann, M.4
Rentsch, J.5
Preu, R.6
-
8
-
-
84877272415
-
Physical model of back line-contact front-junction solar cells
-
A. Cuevas, "Physical model of back line-contact front-junction solar cells," J. Appl. Phys., vol. 113, p. 164502, 2013.
-
(2013)
J. Appl. Phys.
, vol.113
, pp. 164502
-
-
Cuevas, A.1
-
9
-
-
84855331023
-
Modeling solar cells with the dopant-diffused layers treated as conductive boundaries
-
R. Brendel, "Modeling solar cells with the dopant-diffused layers treated as conductive boundaries," Prog. Photovoltaic, Res. Appl., vol. 20, pp. 31-43, 2012.
-
(2012)
Prog. Photovoltaic, Res. Appl.
, vol.20
, pp. 31-43
-
-
Brendel, R.1
-
10
-
-
84872835011
-
A free and fast 3D/2D solar cell simulator featuring conductive boundary and quasi-neutrality approximations
-
Feb
-
A. Fell, "A free and fast 3D/2D solar cell simulator featuring conductive boundary and quasi-neutrality approximations," IEEE Trans. Electron Devices, vol. 60, no. 2, pp. 733-738, Feb. 2013.
-
(2013)
IEEE Trans. Electron Devices
, vol.60
, Issue.2
, pp. 733-738
-
-
Fell, A.1
-
11
-
-
84891631411
-
-
TCAD Sentaurus Device, version 2011.09 CA, USA. [Online]. Available
-
TCAD Sentaurus Device, version 2011.09. Synopsys, Mountain View, CA, USA. [Online]. Available: http://www.synopsys.com
-
-
-
-
12
-
-
80755153221
-
Models for numerical device simulations of crystalline silicon solar cells - A review
-
P. P. Altermatt, "Models for numerical device simulations of crystalline silicon solar cells - A review," J. Comput. Electron., vol. 10, pp. 314-30, 2011.
-
(2011)
J. Comput. Electron.
, vol.10
, pp. 314-330
-
-
Altermatt, P.P.1
-
13
-
-
79961101779
-
Effect of incomplete ionization for the description of highly aluminum-doped silicon
-
M. Rüdiger, M. Rauer, C. Schmiga, andM. Hermle, "Effect of incomplete ionization for the description of highly aluminum-doped silicon," J. Appl. Phys., vol. 110, pp. 024508-1-024508-7, 2011.
-
(2011)
J. Appl. Phys.
, vol.110
, pp. 0245081-0245087
-
-
Rüdiger, M.1
Rauer, M.2
Schmiga, C.3
Hermle, M.4
-
14
-
-
80052086502
-
Modelling carrier recombination in highly phosphorus-doped industrial emitters
-
A. Kimmerle, A. Wolf, U. Belledin, and D. Biro, "Modelling carrier recombination in highly phosphorus-doped industrial emitters," Energy Procedia, vol. 8, pp. 275-281, 2011.
-
(2011)
Energy Procedia
, vol.8
, pp. 275-281
-
-
Kimmerle, A.1
Wolf, A.2
Belledin, U.3
Biro, D.4
-
15
-
-
0002321888
-
Sunrays: A versatile ray tracing program for the photovoltaic community
-
R. Brendel, "Sunrays: a versatile ray tracing program for the photovoltaic community," in Proc. 12th Eur. Photovoltaic Solar Energy Conf., 1994, pp. 1339-1342.
-
Proc. 12th Eur. Photovoltaic Solar Energy Conf.
, vol.1994
, pp. 1339-1342
-
-
Brendel, R.1
-
16
-
-
84891635112
-
-
Milpitas, CA, USA. [Online]. Available
-
LTspice IV, ver. 4.11r, Linear Technology, Milpitas, CA, USA. [Online]. Available: http://www.linear.com/designtools/software/
-
-
-
-
17
-
-
0022306789
-
Measurement of the emitter saturation current by a contactless photoconductivity method
-
D. E. Kane and R. M. Swanson, "Measurement of the emitter saturation current by a contactless photoconductivity method," in Proc. 18th IEEE Photovoltaic Spec. Conf., 1985, pp. 578-581.
-
(1985)
Proc. 18th IEEE Photovoltaic Spec. Conf.
, pp. 578-581
-
-
Kane, D.E.1
Swanson, R.M.2
-
18
-
-
18644375512
-
Numerical modeling of highly doped Si:P emitters based on Fermi-Dirac statistics and self-consistent material parameters
-
P. P. Altermatt, J. O. Schumacher, A. Cuevas, M. J. Kerr, S.W. Glunz, R.R. King, G. Heiser, and A. Schenk, "Numerical modeling of highly doped Si:P emitters based on Fermi-Dirac statistics and self-consistent material parameters," J. Appl. Phys., vol. 92, pp. 3187-3197, 2002.
-
(2002)
J. Appl. Phys.
, vol.92
, pp. 3187-3197
-
-
Altermatt, P.P.1
Schumacher, J.O.2
Cuevas, A.3
Kerr, M.J.4
Glunz, S.W.5
King, R.R.6
Heiser, G.7
Schenk, A.8
-
19
-
-
80054893791
-
-
SAS Inst., Inc., New York, NY, USA
-
JMP Version 9.0, SAS Inst., Inc., New York, NY, USA, 2010.
-
(2010)
JMP Version 9.0
-
-
-
20
-
-
84882272907
-
A simple criterion for predicting multicrystalline Si solar cell performance from lifetime images of wafers prior to cell production
-
H.Wagner, M.Müller, G. Fischer, and P. P. Altermatt, "A simple criterion for predicting multicrystalline Si solar cell performance from lifetime images of wafers prior to cell production," J. Appl. Phys., vol. 114, no. 5, pp. 054501-1-054501-8, 2013.
-
(2013)
J. Appl. Phys.
, vol.114
, Issue.5
, pp. 0545011-0545018
-
-
Wagner, H.1
Müller, M.2
Fischer, G.3
Altermatt, P.P.4
-
21
-
-
84863709682
-
Status and prospects of Al2O3-based surface passivation schemes
-
G. Dingemans and W. M. M. Kessels, "Status and prospects of Al2O3-based surface passivation schemes," J. Vac. Sci. Technol. A, vol. 30, no. 4, pp. 040802-1-040802-24, 2012.
-
(2012)
J. Vac. Sci. Technol. A
, vol.30
, Issue.4
, pp. 0408021-04080224
-
-
Dingemans, G.1
Kessels, W.M.M.2
-
22
-
-
27744512101
-
Recent Progress in the surface passivation of silicon solar cells using silicon nitride
-
Paris, France
-
J. Schmidt, J. D. Moschner, J. Henze, S. Dauwe, and R. Hezel, "Recent Progress in the surface passivation of silicon solar cells using silicon nitride," in Proc. 19th Eur. Photovoltaic Solar Energy Conf., Paris, France, 2004, pp. 974-981.
-
(2004)
Proc. 19th Eur. Photovoltaic Solar Energy Conf.
, pp. 974-981
-
-
Schmidt, J.1
Moschner, J.D.2
Henze, J.3
Dauwe, S.4
Hezel, R.5
-
23
-
-
84891629377
-
-
Ph.D. dissertation, Dept. Solar Energy Res., Leibniz Univ. Hannover, Hanover, Germany
-
S. Hermann, "Laserstrahlablation von SiO2-Passivierschichten mit Anwendung auf die RISE-EWT Solarzelle," Ph.D. dissertation, Dept. Solar Energy Res., Leibniz Univ. Hannover, Hanover, Germany, 2011.
-
(2011)
Laserstrahlablation von SiO2-Passivierschichten Mit Anwendung Auf Die RISE-EWT Solarzelle
-
-
Hermann, S.1
-
24
-
-
84857398280
-
Laser-fired contact optimization in c-Si solar cells
-
P. Ortega, A. Orpella, I. Martin, M. Colina, G. Lopez, C. Voz, M. I. Sanchez, C. Molpeceres, and R. Alcubilla, "Laser-fired contact optimization in c-Si solar cells," Prog. Photovoltaic., Res. Appl., vol. 20, pp. 173-180, 2012.
-
(2012)
Prog. Photovoltaic., Res. Appl.
, vol.20
, pp. 173-180
-
-
Ortega, P.1
Orpella, A.2
Martin, I.3
Colina, M.4
Lopez, G.5
Voz, C.6
Sanchez, M.I.7
Molpeceres, C.8
Alcubilla, R.9
-
25
-
-
0002363078
-
On the experimental attainment of optimum conditions (with discussion)
-
G. E. P. Box and K. B. Wilson, "On the experimental attainment of optimum conditions (with discussion)," J. Roy. Stat. Soc,. B, vol. 13, pp. 1-45, 1951.
-
(1951)
J. Roy. Stat. Soc,. B
, vol.13
, pp. 1-45
-
-
Box, G.E.P.1
Wilson, K.B.2
-
26
-
-
80755126145
-
Determination of the effective optical width of screen-printed and aerosol-printed and plated fingers
-
R. Woehl, M. Hörteis, and S. W. Glunz, "Determination of the effective optical width of screen-printed and aerosol-printed and plated fingers," in Proc. 23rd Eur. Photovoltaic Solar Energy Conf., 2008, pp. 1377-1382.
-
(2008)
Proc. 23rd Eur. Photovoltaic Solar Energy Conf.
, pp. 1377-1382
-
-
Woehl, R.1
Hörteis, M.2
Glunz, S.W.3
-
27
-
-
84866744007
-
Simulation tool for equivalent circuit modeling of photovoltaic devices
-
Oct
-
S. Eidelloth, F. Haase, and R. Brendel, "Simulation tool for equivalent circuit modeling of photovoltaic devices," IEEE J. Photovolt., vol. 2, no. 4, pp. 572-579, Oct. 2012.
-
(2012)
IEEE J. Photovolt.
, vol.2
, Issue.4
, pp. 572-579
-
-
Eidelloth, S.1
Haase, F.2
Brendel, R.3
-
28
-
-
0001612762
-
Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon
-
J. Schmidt and A. Cuevas, "Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon," J. Appl. Phys., vol. 86, pp. 3175-3180, 1999. (Pubitemid 129648249)
-
(1999)
Journal of Applied Physics
, vol.86
, Issue.6
, pp. 3175-3180
-
-
Schmidt, J.1
Cuevas, A.2
-
29
-
-
0037450271
-
Electronic properties of the metastable defect in boron-doped Czochralski silicon: Unambiguous determination by advanced lifetime spectroscopy
-
S. Rein and S.W. Glunz, "Electronic properties of the metastable defect in boron-doped Czochralski silicon: Unambiguous determination by advanced lifetime spectroscopy," Appl. Phys. Lett., vol. 82, pp. 1054-1056, 2003.
-
(2003)
Appl. Phys. Lett.
, vol.82
, pp. 1054-1056
-
-
Rein, S.1
Glunz, S.W.2
-
30
-
-
20444401538
-
Fundamental boron-oxygen-related carrier lifetime limit in mono-and multicrystalline silicon
-
K. Bothe, R. Sinton, and J. Schmidt, "Fundamental boron-oxygen-related carrier lifetime limit in mono-and multicrystalline silicon," Prog. Photovoltaic, Res. Appl., vol. 13, pp. 287-296, 2005.
-
(2005)
Prog. Photovoltaic, Res. Appl.
, vol.13
, pp. 287-296
-
-
Bothe, K.1
Sinton, R.2
Schmidt, J.3
-
31
-
-
0019071879
-
Resistivity-Dopant density relationship for boron-Doped silicon
-
W. R. Thurber, R. L. Mattis, Y. M. Liu, and J. J. Filiben, "Resistivitydopant density relationship for boron-doped silicon," J. Electrochem. Soc., vol. 127, pp. 2291-2294, 1980. (Pubitemid 11477384)
-
(1980)
Journal of the Electrochemical Society
, vol.127
, Issue.10
, pp. 2291-2294
-
-
Thurber, W.R.1
Mattis, R.L.2
Liu, Y.M.3
Filliben, J.J.4
-
32
-
-
84891633290
-
-
Version 3.2.4, Octave community. [Online]. Available
-
GNU/Octave, Version 3.2.4, Octave community. [Online]. Available: www.gnu.org software/octave/
-
-
-
-
33
-
-
78650860740
-
Recombination at laser-processed local base contacts by dynamic infrared lifetimemapping
-
J. Müller, K. Bothe, S. Gatz, F. Haase, C. Mader, and R. Brendel, "Recombination at laser-processed local base contacts by dynamic infrared lifetimemapping," J. Appl. Phys., vol. 108, pp. 124513-1-124513-6, 2010.
-
(2010)
J. Appl. Phys.
, vol.108
, pp. 1245131-1245136
-
-
Müller, J.1
Bothe, K.2
Gatz, S.3
Haase, F.4
Mader, C.5
Brendel, R.6
|