메뉴 건너뛰기




Volumn 27, Issue , 2012, Pages 219-226

Validation of analytical modelling of locally contacted solar cells by numerical simulations

Author keywords

Modelling; PERC; Simulation

Indexed keywords


EID: 84877288585     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2012.07.055     Document Type: Conference Paper
Times cited : (11)

References (17)
  • 1
    • 78650885118 scopus 로고    scopus 로고
    • Comprehensive analytical model for locally contacted rear surface passivated solar cells
    • 124510
    • A. Wolf, D. Biro, J.-F. Nekarda et al., "Comprehensive analytical model for locally contacted rear surface passivated solar cells", Journal of Applied Physics 108 (124510), 1-13 (2010).
    • (2010) Journal of Applied Physics , vol.108 , pp. 1-13
    • Wolf, A.1    Biro, D.2    Nekarda, J.-F.3
  • 3
    • 84870606000 scopus 로고    scopus 로고
    • release E-2010. 12, Synopsys, Zürich, Switzerland
    • Sentaurus TCAD, release E-2010. 12, Synopsys, Zürich, Switzerland.
    • Sentaurus TCAD
  • 4
    • 80755153221 scopus 로고    scopus 로고
    • Models for numerical device simulations of crystalline silicon solar Cells-A review
    • P. P. Altermatt, "Models for numerical device simulations of crystalline silicon solar cells-a review", Journal of Computational Electronics1-17 (2011).
    • (2011) Journal of Computational Electronics1 , vol.17
    • Altermatt, P.P.1
  • 5
    • 0026899752 scopus 로고
    • A unified mobility model for device simulation-II. Temperature dependence of carrier mobility and lifetime
    • D. B. M. Klaassen, "A unified mobility model for device simulation-II. Temperature dependence of carrier mobility and lifetime", Solid-State Electronics 35 (7), 961-7 (1992).
    • (1992) Solid-State Electronics , vol.35 , Issue.7 , pp. 9617
    • Klaassen, D.B.M.1
  • 6
    • 0026899612 scopus 로고
    • A unified mobility model for device simulation. I. Model equations and concentration dependence
    • D. B. M. Klaassen, "A unified mobility model for device simulation. I. Model equations and concentration dependence", Solid-State Electronics 35 (7), 953-9 (1992).
    • (1992) Solid-State Electronics , vol.35 , Issue.7 , pp. 9539
    • Klaassen, D.B.M.1
  • 7
    • 0013226142 scopus 로고    scopus 로고
    • Finite-Temperature full Random-Phase approximation model of band gap narrowing for silicon device simulation
    • A. Schenk, "Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation", Journal of Applied Physics 84 (7), 3684-95 (1998).
    • (1998) Journal of Applied Physics , vol.84 , Issue.7 , pp. 368-495
    • Schenk, A.1
  • 8
    • 0037320144 scopus 로고    scopus 로고
    • Reassessment of the intrinsic carrier density in crystalline silicon in view of Band-Gap narrowing
    • P. P. Altermatt, A. Schenk and F. Geelhaar, "Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing", Journal of Applied Physics 93 (3), 1598-604 (2003).
    • (2003) Journal of Applied Physics , vol.93 , Issue.3 , pp. 1598-1604
    • Altermatt, P.P.1    Schenk, A.2    Geelhaar, F.3
  • 9
  • 10
    • 0040028982 scopus 로고    scopus 로고
    • Minority carrier lifetime degradation in Boron-Doped czochralski silicon
    • S. W. Glunz, S. Rein, J. Y. Lee et al., "Minority carrier lifetime degradation in boron-doped Czochralski silicon", Journal of Applied Physics 90 (5), 2397-404 (2001).
    • (2001) Journal of Applied Physics , vol.90 , Issue.5 , pp. 239-7404
    • Glunz, S.W.1    Rein, S.2    Lee, J.Y.3
  • 11
    • 0037450271 scopus 로고    scopus 로고
    • Electronic properties of the metastable defect in boron-doped Czochralski silicon: Unambiguous determination by advanced lifetime spectroscopy
    • S. Rein and S. W. Glunz, "Electronic properties of the metastable defect in boron-doped Czochralski silicon: Unambiguous determination by advanced lifetime spectroscopy", Applied Physics Letters 82 (7), 1054-56 (2003).
    • (2003) Applied Physics Letters , vol.82 , Issue.7 , pp. 105-456
    • Rein, S.1    Glunz, S.W.2
  • 12
    • 33646036113 scopus 로고    scopus 로고
    • Investigation of Laser-Fired Rear-Side recombination properties using an analytical model
    • D. Kray and S. W. Glunz, "Investigation of laser-fired rear-side recombination properties using an analytical model", Progress in Photovoltaics: Research and Applications 14195-201 (2006).
    • (2006) Progress in Photovoltaics: Research and Applications , pp. 1419-5201
    • Kray, D.1    Glunz, S.W.2
  • 15
    • 80052086502 scopus 로고    scopus 로고
    • Modelling carrier recombination in highly Phosphorus-Doped industrial emitters
    • A. Kimmerle, A. Wolf, U. Belledin et al., "Modelling carrier recombination in highly phosphorus-doped industrial emitters", Energy Procedia 8275-81 (2011).
    • (2011) Energy Procedia , pp. 827581
    • Kimmerle, A.1    Wolf, A.2    Belledin, U.3
  • 16
    • 0003675250 scopus 로고    scopus 로고
    • Semiconductor devices
    • John Wiley & Sons Inc., New York, NY, USA
    • S. M. Sze, "Semiconductor devices, Physics and Technology. " (John Wiley & Sons Inc., New York, NY, USA, 2002).
    • (2002) Physics and Technology
    • Sze, S.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.