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Applied Physics Letters

Volumn 103, Issue 25, 2013, Pages

Ionic liquid gated electric-double-layer transistors based on Mg-doped InN epitaxial films

(9) Chen, Z Y a Yuan, H T a Wang, X Q b,c Ma, N c Zhang, Y W c Shimotani, H a Qin, Z X c Shen, B b,c Iwasa, Y a,d

a UNIVERSITY OF TOKYO (Japan)

b Frontier Science Center for Quantum Information (China)

c PEKING UNIVERSITY (China)

d RIKEN Center for Emergent Matter Science (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANOMALOUS OSCILLATIONS; BULK CONDUCTION; ELECTRICAL TRANSPORT; HALL COEFFICIENT; INN EPITAXIAL FILMS; PARALLEL CONDUCTION; TUNABILITIES; TWO-CARRIER MODEL;

COMPUTER SIMULATION; EPITAXIAL FILMS; IONIC LIQUIDS;

ELECTRIC PROPERTIES;

EID: 84891389968 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4852175 Document Type: Article

Times cited : (10)

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