Design principles for HgTe based topological insulator devices

Journal of Applied Physics

Volumn 114, Issue 4, 2013, Pages

  Sengupta, Parijat ^a   Kubis, Tillmann ^a   Tan, Yaohua ^a   Povolotskyi, Michael ^a   Klimeck, Gerhard ^a  

^a Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED STRESS; CDTE; DESIGN PRINCIPLES; EXTERNAL ELECTRIC FIELD; GROWTH DIRECTIONS; NOVEL DEVICES; TOPOLOGICAL INSULATORS; WELL WIDTH;

CADMIUM ALLOYS; ELECTRIC FIELDS; ELECTRIC INSULATORS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84882435091     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4813877     Document Type: Article

References (28)

1. M. Z. Hasan and C. L. Kane, Rev. Mod. Phys. 82, 3045 (2010). 10.1103/RevModPhys.82.3045
2. L. Fu and C. L. Kane, Phys. Rev. B 76, 045302 (2007). 10.1103/PhysRevB.76.045302
3. R. Roy, Phys. Rev. B 79, 195322 (2009). 10.1103/PhysRevB.79.195322
4. C. L. Kane and E. J. Mele, Phys. Rev. Lett. 95, 146802 (2005). 10.1103/PhysRevLett.95.146802
5. S. Murakami, New J. Phys. 9, 356 (2007). 10.1088/1367-2630/9/9/356
6. H. Zhang, C. Liu, X. Qi, X. Dai, Z. Fang, and S. Zhang, Nat. Phys. 5, 438 (2009). 10.1038/nphys1270
7. Y. Xia, D. Qian, D. Hsieh, L. Wray, A. Pal, H. Lin, A. Bansil, D. Grauer, Y. Hor, R. Cava, Nat. Phys. 5, 398 (2009). 10.1038/nphys1274
8. Y. Chen, J. Analytis, J. Chu, Z. Liu, S. Mo, X. Qi, H. Zhang, D. Lu, X. Dai, Z. Fang, Science 325, 178 (2009). 10.1126/science.1173034
9. M. König, S. Wiedmann, C. Brüne, A. Roth, H. Buhmann, L. Molenkamp, X. Qi, and S. Zhang, Science 318, 766 (2007). 10.1126/science.1148047
10. B. Bernevig, T. Hughes, and S. Zhang, Science 314, 1757 (2006). 10.1126/science.1133734
11. A. Roth, C. Brüne, H. Buhmann, L. Molenkamp, J. Maciejko, X. Qi, and S. Zhang, Science 325, 294 (2009). 10.1126/science.1174736
12. M. Büttiker, Science 325, 278 (2009). 10.1126/science.1177157
13. N. Cade and P. Lee, Solid State Commun. 56, 637 (1985). 10.1016/0038-1098(85)90974-3
14. I. Tsidil'kovskii, Band Structure of Semiconductors (Pergamon Press, 1982).
15. L. Molenkamp, private communication (2012).
16. J. Maciejko, T. Hughes, and S. Zhang, Annu. Rev. Condens. Matter Phys. 2, 31 (2011). 10.1146/annurev-conmatphys-062910-140538
17. P. Sengupta, S. Lee, S. Steiger, H. Ryu, and G. Klimeck, in MRS Proceedings (Cambridge University Press, 2011), Vol. 1370.
18. R. K. Willardson and A. C. Beer, Semiconductors Semimetals (Academic Press, 1977), Vol. 16.
19. E. G. Novik, A. Pfeuffer-Jeschke, T. Jungwirth, V. Latussek, C. R. Becker, G. Landwehr, H. Buhmann, and L. W. Molenkamp, Phys. Rev. B 72, 035321 (2005). 10.1103/PhysRevB.72.035321
20. J. Los, A. Fasolino, and A. Catellani, Phys. Rev. B 53, 4630 (1996). 10.1103/PhysRevB.53.4630
21. J. Schulman and Y. Chang, Phys. Rev. B 33, 2594 (1986). 10.1103/PhysRevB.33.2594
22. G. Wu and T. McGill, Appl. Phys. Lett. 47, 634 (1985). 10.1063/1.96041
23. J. Lu, W. Shan, H. Lu, and S. Shen, New J. Phys. 13, 103016 (2011). 10.1088/1367-2630/13/10/103016
24. C. Brüne, A. Roth, H. Buhmann, E. Hankiewicz, L. Molenkamp, J. Maciejko, X. Qi, and S. Zhang, Nat. Phys. 8, 485-490 (2012). 10.1038/nphys2322
25. M. König, H. Buhmann, L. Molenkamp, T. Hughes, C. Liu, X. Qi, and S. Zhang, J. Phys. Soc. Jpn. 77, 031007 (2008). 10.1143/JPSJ.77.031007
26. J. Teo, L. Fu, and C. Kane, Phys. Rev. B 78, 045426 (2008). 10.1103/PhysRevB.78.045426
27. S. Krishnamurthy, A. Chen, A. Sher, and M. Van Schilfgaarde, J. Electron. Mater. 24, 1121 (1995). 10.1007/BF02653063
28. X. Zhang, A. Pfeuffer-Jeschke, K. Ortner, V. Hock, H. Buhmann, C. Becker, and G. Landwehr, Phys. Rev. B 63, 245305 (2001). 10.1103/PhysRevB.63.245305