Fabrication and characterizations of phosphorus-doped n-type BaSi2 epitaxial films grown by molecular beam epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 10, Issue 12, 2013, Pages 1753-1755

  Takabe, R ^a   Baba, M ^a   Nakamura, K ^a   Du, W ^a   Khan, M A ^a   Koike, S ^a   Toko, K ^a   Hara, K O ^b   Usami, N ^b,c   Suemasu, T ^a,c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

BaSi2; Phosphorus; Solar cell

Indexed keywords

BASI2; ELECTRON CONCENTRATION; FABRICATION AND CHARACTERIZATIONS; PHOSPHORUS-DOPED; ROOM TEMPERATURE; TEMPERATURE DEPENDENCE;

ACTIVATION ENERGY; EPITAXIAL FILMS; MOLECULAR BEAM EPITAXY; PHOSPHORUS; SOLAR CELLS;

EPITAXIAL GROWTH;

EID: 84890790268     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201300326     Document Type: Article

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