High-quality Si3N4 circuits as a platform for graphene-based nanophotonic devices

Optics Express

Volumn 21, Issue 25, 2013, Pages 31678-31689

  Gruhler, N ^a   Benz, C ^a,c   Jang, H ^b   Ahn, J H ^b   Danneau, R ^a,c   Pernice, W H P ^a  

^a KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^b Yonsei University   (South Korea)

^c KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON BASED MATERIALS; ELECTRICALLY TUNABLE; EXTINCTION RATIOS; LIGHT-MATTER INTERACTIONS; MICRORING RESONATOR; NANOPHOTONIC DEVICES; PHASE-SENSITIVE DETECTION; SILICON NITRIDE WAVEGUIDES;

GRAPHENE; HYBRID MATERIALS; NANOPHOTONICS; OPTOELECTRONIC DEVICES; SILICON NITRIDE;

FLEXIBLE ELECTRONICS;

EID: 84890498827     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.21.031678     Document Type: Article

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