Dynamic process of phase transition from wurtzite to zinc blende structure in InAs nanowires

Nano Letters

Volumn 13, Issue 12, 2013, Pages 6023-6027

  Zheng, He ^a,b   Wang, Jian ^c   Huang, Jian Yu ^d   Wang, Jianbo ^b   Zhang, Ze ^e   Mao, Scott X ^a  

^a University of Pittsburgh   (United States)

^b WUHAN UNIVERSITY   (China)

^c LOS ALAMOS NATIONAL LABORATORY   (United States)

^d Zhejiang University ^*  (United States)

^e ZHEJIANG UNIVERSITY   (China)

Author keywords

dislocation; In situ transmission electron microscopy; InAs nanowires; phase transition; zinc blende

Indexed keywords

DISLOCATIONS (CRYSTALS); III-V SEMICONDUCTORS; IN SITU PROCESSING; INDIUM ARSENIDE; NANOWIRES; NARROW BAND GAP SEMICONDUCTORS; PHASE TRANSITIONS; SHEAR STRESS; TRANSMISSIONS; ZINC; ZINC METALLOGRAPHY; ZINC SULFIDE;

IN-SITU OBSERVATIONS; IN-SITU TRANSMISSION ELECTRON MICROSCOPIES; INAS NANOWIRES; LIQUID/SOLID INTERFACE; SEMICONDUCTOR NANOWIRE; SHOCKLEY PARTIAL DISLOCATIONS; ZINC BLENDE; ZINC-BLENDE STRUCTURES;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

INDIUM; INDIUM ARSENIDE; NANOWIRE; ORGANOARSENIC DERIVATIVE; ZINC;

ARTICLE; CHEMISTRY; PHASE TRANSITION; SEMICONDUCTOR; SURFACE PROPERTY;

ARSENICALS; INDIUM; NANOWIRES; PHASE TRANSITION; SEMICONDUCTORS; SURFACE PROPERTIES; ZINC;

EID: 84890384236     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl403240r     Document Type: Article

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