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Volumn 13, Issue 7, 2013, Pages 3169-3172

Anelastic behavior in GaAs semiconductor nanowires

Author keywords

Anelasticity; crystalline defects; GaAs nanowires; in situ deformation; transmission electron microscopy

Indexed keywords

ANELASTIC BEHAVIOR; ANELASTICITY; CRYSTALLINE DEFECTS; GAAS NANOWIRES; GAAS SEMICONDUCTORS; MECHANICAL BEHAVIOR; SITU DEFORMATION; VERTICALLY ALIGNED;

EID: 84880149883     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl401175t     Document Type: Article
Times cited : (38)

References (31)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.