Charge injection in molecular devices-order effects

Computational Materials Chemistry: Methods and Applications

Volumn , Issue , 2005, Pages 308-367

  Burin, A L ^a,b   Ratner, M A ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

^b Tulane University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84890005968     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1007/1-4020-2117-8_8     Document Type: Chapter

References (86)

1. Molecular Electronics: Science and Technology, edited by A. Aviram and M. A. Ratner (New York Academy of Sciences, New York, 1998)
2. M. D. Newton, Adv. Chem. Phys. 106, 303 (1999).
3. J. Chen, M. A. Reed, A. M. Rawlett, and J. M. Tour, Science, 286, 1550 (1999).
4. V. Mujica, A. E. Roitberg, and M. A. Ratner, J. Chem. Phys. 112, 6834 (2000)
5. S. N. Yaliraki, A. E. Roitberg, C. Gonzalez, V. Mujica, and M. A. Ratner, J. Chem. Phys. 111, 6997 (1999).
6. N. R. Armstrong, R. M. Wightman, and E. M. Gross, Ann. Rev. Phys. Chem. 52, 391 (2001)
7. J. R. Sheats, H. Antoniadis, M Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking, Science 273, 884 (1996)
8. H. Bassler, Polym. and Adv. Techn. 9, 402 (1998)
9. D. Vuillaume, B. Chen and R.M. Metzger, Langmuir 15, 4011 (1999)
10. E. Punkka and R.F. Rubner, J. Elect. Mat. 21, 1057 (1992).
11. M. A. Lampert and P. Mark, Current Injection in Solids ~Academic, (New York, 1970)
12. Electronic processes in organic crystals and polymers, Martin Pope, Charles E. Swenberg. 2nd ed.: New York : Oxford University Press, 1999.
13. L. Bozano, S. A. Carter, J. C. Scott, G. G. Malliaras, and P. J. Brock, Appl. Phys. Lett., 74, 1132 (1999)
14. W. Geens, D. Tsamouras, J. Poortmans, and G. Hadziioannou, Synth. Met. 8, 191 (2001).
15. M. K. Lee, R. H. Horng, and L. C. Haung, J. Appl. Phys. 72, 5420 (1992).
16. W. J. Li, Q. W. Wang, J. Cui, H. Chou, S. E. Shaheen, G. E. Jabbour, J. Anderson, P. Lee, B. Kippelen, N. Peyghambarian, N. R. Armstrong, and T. J. Marks, Adv. Mater. 11, 730 (1999);
17. M. L. Swiggers, G. Xia, J. D. Slinker, A. A. Gorodetsky, G. G. Malliaras, R. L. Headrick, B. T. Weslowski, R. N. Shashidhar, and C. S. Dulcey, Appl. Phys. Lett. 79, 1300 (2001).
18. J. Cui, Q. Huang, J. C. G. Veinot, H. Van, Q. Wang, G. Hutchinson, A. G. Richter, G. Evmenenko, P. Dutta, and T. J. Marks, Langmuir 18, 9958 (2002).
19. L. E. Calvet, R. G. Wheeler, and M. A. Reed, Appl. Phys. Lett. 80, 1761 (2002).
20. P. E. Burrows and S. R. Forrest, Appl. Phys. Lett. 64, 2285 (1994).
21. H. Tang, F. Li and J. Shinar, Appl. Phys. Lett. 71, 2560 (1997).
22. U. Wolf, V. I. Arkhipov and H. Bässler, Phys. Rev. B, 59, 7507, 1999
23. V. I. Arkhipov, E. V. Emelianova, Y. H. Tak, and H. Bassler, J. Appl. Phys. 84, 848, (1998).
24. S. Barth, U. Wolf, H. Bässler, P. Muller, H. Riel, H. Vestweber, P. F. Seidler, and W. Riea, Phys. Rev. B, 60, 8791 (1999)
25. U. Wolf, S. Barth, H. Bässler, Appl. Phys. Lett. 75, 2035 (1999).
26. A. L. Burin and M. A. Ratner, J. Chem. Phys. 113, 3941 (2000).
27. M. A. Baldo and S. R. Forrest, Phys. Rev. B 64, 085201 (2001).
28. M. A. Baldo, Z. G. Soos and S. R. Forrest, Chem. Phys. Lett. 347, 297 (2001).
29. S. Karg, J. Steiger, and H. von Seggern, Synth. Met. 111, 277 (2000).
30. W. Brutting, E. Buchwald, G. Egerer, M. Meier, K. Zuleeg, and M. Schwoerer, Synth. Met. 84, 677 (1997).
31. S. V. Novikov, D. H. Dunlap, V. M. Kenkre, P. E. Parris, A. V. Vannikov, Phys. Rev. Lett. 81, 4472 (1998)
32. D. H. Dunlap, P. E. Parris, V. M. Kenkre, Phys. Rev. Lett. 77, 542 (1996)
33. M. W. Klein, D. H. Dunlap, and G. G. Malliaras, Phys. Rev. B 64, 195332 (2001).
34. A. J. Campbell, D. D. C. Bradley, and H. Antoniadis, J. Appl. Phys. 89, 3343 (2001).
35. J. Staudigel, M. Stossel, F. Steuber, J. Blassing, and J. Simmerer, Synth. Met. 111, 69 (2000).
36. A. J. Campbell, D. D. C. Bradley, J. Laubender, and M. Sokolowski, J. Appl. Phys. 86, 5004 (1999).
37. Y. Shen, M. W. Klein, D. B. Jacobs, J. C. Scott, G. C. Malliaras, Phys. Rev. Lett. 86, 3867 (2001).
38. P. S. Davids, I. H. Campbell, and D. L. Smith, J. Appl. Phys. 82, 6319 (1997).
39. I. H. Campbell, P. S. Davids, D. L. Smith, N. N. Barashkov, and J. P. Ferraris, Appl. Phys. Lett. 72, 1863 (1998).
40. G. G. Malliaras and J. C. Scott, J. Appl. Phys. 85, 7426 (1999).
41. S. Barth, U. Wolf, H. Bassler, P. Muller, H. Riel, H. Vestweber, P. F. Seidler, and W. Riess, Phys. Rev. B 60, 8791 (1999).
42. F. Anariba, R. L. McCreery, J. Phys. Chem. B 106, 10355 (2002).
43. In several cases it is possible to reach the conditions where the Fermi level is located below the highest occupied molecular level. For instance this takes place for Indium Tin Oxide (ITO) electrode coated by the self-assembled siloxane layer (see J. E. Malinsky, J. G.C. Veinot, G. E. Jabbour, S. E. Shaheen, J. D. Anderson, P. Lee, A. G. Richter, A. L. Burin, M. A. Ratner, T. J. Marks, N. R. Armstrong, B. Kippelen, P. Dutta, and N. Peyghambarian, to appear in Chemistry of Materials, 14, 3054 (2002)). In these systems the image potential captures the extra charge and can still create a large injection barrier for conducting holes [Ref. 26].
44. V. Kasperovich, K. Wong, G. Tikhonov, and V. V. Kresin, Phys. Rev. Lett. 85, 2729 (2000).
45. B. K. Crone, P. S. Davids, I. H. Campbell, and D. L. Smith, J. Appl. Phys. 87, 1974 (2000).
46. G. G. Malliaras, J. R. Salem, P. J. Brock, and J. C. Scott, J. Appl. Phys. 84, 1583 (1998).
47. H. Ness and A. J. Fisher, Appl. Phys. A -Mater. Sci. & Processing 66, S919, Part 2 Suppl. S, (1998).
48. E. Etterdgui, H. Razafitrimo, Y. Gao, and B. R. Hsieh, Appl. Phys. Lett. 67, 2705, (1995).
49. A. Onipko, Y. Klymenko, and L. Malysheva, J. Chem. Phys. 107, 7331 (1997).
50. M. Koehler and I. A. Hümmelgen, Appl. Phys. Lett. 70, 3254 (1997)
51. C. Y. Lee, M. Z. Tidrow, K. K. Choi, W. H. Chang, L. F. Eastman, F. J. Towner, and J. S. Ahearn, Appl. Phys. Lett. 65, 442 (1994).
52. S. N. Burmistrov and L. B. Dubovskii, Zh. Eksp. Teor. Fiz.100, 1844 (1991).
53. J. K. Schon, C. Kloc, and B. Batlogg, Phys. Rev. B 63, art. no. 125304 (2001).
54. R. E. Holmlin, R. F. Ismagilov, R. Haag, V. Mujica, M. A. Ratner, M. A. Rampi, and G. M Whitesides, Angew. Chem. Int. Ed. 40, 2316 (2001).
55. J. Klafter and J. Jortner, Chem. Phys. Lett. 60, 5 (1978).
56. E. M. Monberg and R. Kopelman, Chem. Phys. Lett. 58, 497 (1978).
57. R. A. Marcus and N. Sutin, Biochim. et. Biopys. Acta, 811, 265 (1985).
58. N. R. Kestner, J. Logan, and J. Jortner, J. Phys. Chem. 78, 2148 (1974).
59. H. Sugiyama, and I. Saito, J. Amer. Chem. Soc. 118, 7063 (1996).
60. A. A. Voityuk, N. Rosch, M. Bixon, and J. Jortner, J. Phys. Chem. B 104, 9740, (2000).
61. Y. A. Berlin and A. L. Burin, Chem. Phys. Lett. 257, 665 (1996).
62. J. P. Bouchaud and A. Georges, Phys. Rep. 195, 127 (1990).
63. Y. N. Garstein and E. M. Conwell, Chem. Phys. Lett. 217, 41 (1994
64. see also A. L. Burin and M. A. Ratner, J. Chem. Phys. 109, 6092 (1998).
65. R. Englman and J. Jortner, Mol. Phys. 18, 145 (1970).
66. B. K. Crone, I. H. Campbell, P. S. Davids, D. L. Smith, C. J. Neef, and J. P. Ferraris, J. Appl. Phys. 86, 5767 (1999).
67. S. John, M. Y. Chou, M. H. Cohen, and C. M. Soukoulis, Phys. Rev. B 37, 6963 (1988).
68. T. J. Marks, J. G. C. Veinot, J. Cui, H. Yan, A. Wang, N. L. Edleman, J. Ni, Q. Huang, P. Lee, and N. R. Armstrong, Synth. Met. 127, 29 (2002);
69. G. E. Jabbour, B. Kippelen, N. R. Armstrong, and N. Peyghambarian, Appl. Phys. Lett. 73, 1185 (1998).
70. J. H. Werner and H. H. Güttler, J. Appl. Phys. 69, 1522 (1991).
71. J. Staudigel, M. Stöael, F. Steuber, and J. Simmerer, J. Appl. Phys. 86, 3895 (1999).
72. P. Sigaud, J. N. Chzalviel, and F. Ozanam, J. Appl. Phys. 89, 466 (2001).
73. L. Leuzzi and Th. M. Nieuwenhuizen, J. Phys. -Cond. Matt. 14, 1637 (2002).
74. D. Thirumalai and R. D. Mountain, Phys. Rev. E 47, 479 (1993)
75. V. I. Arkhipov, H. Bassler, J. Phys. Chem. 98, 662 (1994).
76. M. Matsumura, T. Akai, M. Saito, and T. Kimura, J. Appl. Phys. 79, 264 (1996)
77. M. Matsumura, and Y. Jinde, Appl. Phys. Lett. 73, 2872 (1998).
78. See D. V. Khramtchenkov, V. I. Arkhipov, and H. Bassler, J. Appl. Phys. 79, 9283 (1996); despite of the assumption of the tunneling injection mechanism that was not confirmed by the later studies this work can also be applied to the thermally activated injection after weak modifications.
79. R. H. Young, C. W. Tang, A. P. Marchetti, Appl. Phys. Lett. 80, 874, 2002
80. A. L. Burin, M. A. Ratner, J. Phys. Chem. A, 104, 4704, 2000.
81. J. S. Kim, R. H. Friend, F. Cacialli, Appl. Phys. Lett. 74, 3084, 1999
82. C. I. Chao, K. R. Chuang, S. A. Chen, Appl. Phys. Lett. 69, 2894, 1996.
83. E. W. Forsythe, M. A. Abkowitz, and Y. Gao, J. Phys. Chem. B 104, 3948 (2000).
84. M. K. Hudait and S. B. Krupanidhi, Physica B 307, 125 (2001).
85. J. P. Sullivan, R. T. Tung, M. R. Pinto, and W. R. Graham, J. Appl. Phys. 70, 7403 (1991).
86. G. G. Malliaras, Y. Shen, D. H Dunlap, H. Murata and Z. H. Kafafi, 79, 2582 (2001).