Fabrication and characterization of high-mobility graphene p-n-p junctions encapsulated by hexagonal boron nitride

Japanese Journal of Applied Physics

Volumn 52, Issue 11 PART 1, 2013, Pages

  Masubuchi, Satoru ^a,b   Morikawa, Sei ^a   Onuki, Masahiro ^a   Iguchi, Kazuyuki ^a   Watanabe, Kenji ^c   Taniguchi, Takashi ^c   Machida, Tomoki ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY LENGTH; FABRICATION AND CHARACTERIZATIONS; FABRY PEROT INTERFERENCE; HEXAGONAL BORON NITRIDE; HIGH MOBILITY; KLEIN TUNNELING; RESISTANCE OSCILLATION; TUNABLE POLARITIES;

BORON NITRIDE; CHARGE CARRIERS; FABRY-PEROT INTERFEROMETERS;

GRAPHENE;

EID: 84888992693     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.52.110105     Document Type: Article

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