Threshold voltage dispersion and impurity scattering limited mobility in carbon nanotube field effect transistors with randomly doped reservoirs

ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

Volumn , Issue , 2006, Pages 202-205

  Fiori, Gianluca ^a   Iannaccone, Giuseppe ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; DRAIN CURRENT; ELASTIC SCATTERING; GREEN'S FUNCTION; POISSON EQUATION; SCHRODINGER EQUATION; THRESHOLD VOLTAGE;

DOPED RESERVOIRS; DRAIN EXTENSIONS; IMPURITY SCATTERING;

FIELD EFFECT TRANSISTORS;

EID: 84888690544     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2006.307673     Document Type: Conference Paper

References (16)

1. R. Martel, HSP Wong, K. Chan, and P. Avouris Carbon nanotube field-effect transistors for logica applications", In IEDM Tech, Digest, pp. 159-162, 2001.
2. ITRS 2005, available at : http://public.itrs.net.
3. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and Ph. Avouris, Carbon nanotubes as schottky barrier transistors. Phys. Rev. Lett., Vol. 89, pp. 106801-106803, 2002.
4. J. Chen, C. Klinke, A. Afzali, and P. Avouris, Self-alligned carbon nanotube transistors with charge transfer doping. Appl. Phys, Lett., Vol. 86, p.123108, 2005.
5. G. Fiori, G. Iannaccone, and G. Klimeck, Performance of carbon nanotube field effect transistors with doped source and drain extensions and arbitrary geometry IEDM Tech. Digest, pp. 529-532, 2005.
6. T. Dürkop, S. A. Getty, E. Cobas, and M. S. Fuhrer Extraordinary mobility in semiconducting carbon nanotube Nano Letters, Vol. 4, pp. 35-39, 2004.
7. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, Ballistic carbon nanotube field-effect transistors. Nature, Vol. 424, pp. 654-657, 2003.
8. S. Datta. Nanoscale device modeling : Green's function method. Superlattice and Microstructures, Vol. 28, pp.253-277, 2000.
9. R. Lake, G. Klimeck, R. C. Bowen, and D. Jovanovic, Single and Multi-band modeling of quantum electron transport through layered semiconductors devices, J. Appl. Phys., Vol. 81, pp. 7845-7869, 1997.
10. A. Svizhenko, M. P. Anantram, T. R. Govindam, and B. Biegel, Two-dimensional quantum mechanical modeling of nanotransistors, J. Appl. Phys., Vol.91, pp. 2343-2354, 2001.
11. M Shim, A Javey, NWS Kam, H Dai, Polymer functionalization of air-stable n-type carbon nanotube field effect transistors J. Am. Chem. Soc., Vol. 123, pp. 11512-11513,2001.
12. K.Bradley J.P. Gabriel, M. Briman, A. Star, G. Grüner, Charge Transfer from Ammonia Physisorbed on Nanotubes Phys. Rev. Letters, Vol. 91, pp.218301-1:218301-4, 2003.
13. G. Fiori, G. Iannaccone, G. Klimeck, Coupled mode space vs Real space approach for the simulation of CNT-FETs to be published on the proc. of IWCE, Vienna 2006.
14. M. Bockrath, J. Hone, A. Zettl, RL. McEuen, A.G. Rinzler Chemical doping of individual semiconducting carbon-nanotube ropes Phys. Rev. B, Vol. 61, pp. 10606-10608, 2000.
15. J. Wang and M. Lundstrom, Ballistic transport in high electron mobility transistors IEEE Trans. on Electr. Dev., Vol. 50, pp. 1604-1609, 2003.
16. M.S. Shur, Low ballistic mobility in submicron HEMTs IEEE Electron Device Lett., Vol. 23, pp. 511-513, 2002.