Recombination lifetime modification in bulk, semi-insulating 4H-SiC photoconductive switches

Digest of Technical Papers-IEEE International Pulsed Power Conference

Volumn , Issue , 2011, Pages 1105-1107

  Hettler, C ^a   Sullivan III, W ^a   Dickens, J ^a  

^a Texas Tech University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED SAMPLES; ANNEALING PROCESS; AS-GROWN; BULK MATERIALS; HIGH PURITY; HIGH TEMPERATURE; HIGH-TEMPERATURE ANNEALING; INDUCTION FURNACE; MICROWAVE PHOTOCONDUCTIVITY; NUMERICAL PROCESSING; PROCESSING PARAMETERS; RECOMBINATION CENTERS; RECOMBINATION LIFETIME; SEMI-INSULATING; TEMPORAL CHARACTERISTICS; TRANSIENT PHOTOCONDUCTIVITY;

ANNEALING; PHOTOCONDUCTIVE SWITCHES; PHOTOCONDUCTIVITY; POINT DEFECTS;

SILICON CARBIDE;

EID: 84861373526     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PPC.2011.6191652     Document Type: Conference Paper

References (6)

1. M.E. Levinshtein, S.L. Rumyantsev, and M.S. Shur, Properties of Advanced Semiconductor Materials, New York: Wiley, 2001, pp. 93-142.
2. C. Hettler, "Investigation and Evaluation of High Voltage Silicon Carbide Photoconductive Semiconductor Switches," M.S. Thesis, Texas Tech University, Lubbock, TX, August 2009.
3. K.S. Kelkar, "Silicon Carbide as a Photoconductive Switch Material for High Power Applications," Ph.D. Dissertation, University of Missouri - Columbia, Columbia, MO, December 2006.
4. C. Hettler, C. James, J. Dickens, A. Neuber, "Carrier Lifetime Studies of Semi-Insulating Silicon Carbide for Photoconductive Switch Applications," IEEE Power Modulators and High Voltage Conference, Proceedings of the 2010, May 2010.
5. R. J. Kumar, et aI., "Microwave photoconductivity decay characterization of high-purity 4H-SiC substrates,"J. of App. Physics, vol. 102, 013704 pp. 1-8, July 2007.
6. J. R. Jenny et aI., "Effects of annealing on carrier lifetime in 4H-SiC," Journal of Applied Physics, 100, 113710, 2006.