The effect of carbon nanotube/organic semiconductor interfacial area on the performance of organic transistors

Applied Physics Letters

Volumn 101, Issue 23, 2012, Pages

  Kang, Narae ^a   Sarker, Biddut K ^a   Khondaker, Saiful I ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE MOBILITY; BARRIER HEIGHTS; DEVICE PERFORMANCE; INTERFACIAL AREAS; ON-CURRENTS; ON-OFF RATIO; ORGANIC TRANSISTOR; PD ELECTRODES; PENTACENE TRANSISTORS;

PHYSICAL PROPERTIES; PHYSICS;

TRANSISTORS;

EID: 84870884572     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4769439     Document Type: Article

References (26)

1. C. D. Dimitrakopoulos and P. R. L. Malenfant, Adv. Mater. 14, 99 (2002). 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO;2-9
2. S. R. Forrest, Nature 428, 911 (2004). 10.1038/nature02498
3. A. Dodabalapur, Mater. Today 9, 24 (2006). 10.1016/S1369-7021(06)71444-4
4. T. B. Singh and N. S. Sariciftci, Annu. Rev. Mater. Res. 36, 199 (2006). 10.1146/annurev.matsci.36.022805.094757
5. D. J. Gundlach, L. Zhou, J. A. Nichols, T. N. Jackson, P. V. Necliudov, and M. S. Shur, J. Appl. Phys. 100, 024509 (2006). 10.1063/1.2215132
6. L. Burgi, T. J. Richards, R. H. Friend, and H. Sirringhaus, J. Appl. Phys. 94, 6129 (2003). 10.1063/1.1613369
7. S. Braun, W. R. Salaneck, and M. Fahlman, Adv. Mater. 21, 1450 (2009). 10.1002/adma.200802893
8. I. G. Hill, A. Rajagopal, A. Kahn, and Y. Hu, Appl. Phys. Lett. 73, 662 (1998). 10.1063/1.121940
9. N. Koch, A. Kahn, J. Ghijsen, J.-J. Pireaux, J. Schwartz, R. L. Johnson, and A. Elschner, Appl. Phys. Lett. 82, 70 (2003). 10.1063/1.1532102
10. P. Qi, A. Javey, M. Rolandi, Q. Wang, E. Yenilmez, and H. Dai, J. Am. Chem. Soc. 126, 11774 (2004). 10.1021/ja045900k
11. C. M. Aguirre, C. Ternon, M. Paillet, P. Desjardins, and R. Martel, Nano Lett. 9, 1457 (2009). 10.1021/nl8033152
12. S. L. Hellstrom, R. Z. Jin, R. M. Stoltenberg, and Z. Bao, Adv. Mater. 22, 4204 (2010). 10.1002/adma.201001435
13. B. K. Sarker and S. I. Khondaker, Appl. Phys. Lett. 100, 023301 (2012). 10.1063/1.3675639
14. B. K. Sarker and S. I. Khondaker, ACS Nano 6, 4993 (2012). 10.1021/nn300544v
15. A. Southard, V. Sangwan, J. Cheng, E. D. Williams, and M. S. Fuhrer, Org. Electron. 10, 1556 (2009). 10.1016/j.orgel.2009.09.001
16. C.-H. Chang, C.-H. Chien, and J.-Y. Yang, Appl. Phys. Lett. 91, 083502 (2007). 10.1063/1.2771532
17. Q. Cao, Z.-T. Zhu, M. G. Lemaitre, M.-G. Xia, M. Shim, and J. A. Rogers, Appl. Phys. Lett. 88, 113511 (2006). 10.1063/1.2181190
18. B. K. Sarker, J. Liu, L. Zhai, and S. I. Khondaker, ACS Appl. Mater. Interfaces 3, 1180 (2011). 10.1021/am200013y
19. J. Chen, H. Liu, W. A. Weimer, M. D. Halls, D. H. Waldeck, and G. C. Walker, J. Am. Chem. Soc. 124, 9034 (2002). 10.1021/ja026104m
20. M. Foroutan and A. T. Nasrabadi, J. Phys. Chem. B 114, 5320 (2010). 10.1021/jp100960u
21. F. Tournus, S. Latil, M. I. Heggie, and J. C. Charlier, Phys. Rev. B 72, 075431 (2005). 10.1103/PhysRevB.72.075431
22. G. Zhou, W. Duan, and B. Gu, Phys. Rev. Lett. 87, 095504 (2001). 10.1103/PhysRevLett.87.095504
23. See supplementary material at http://dx.doi.org/10.1063/1.4769439 E-APPLAB-101-040250 for characterization of the nanotube array, electrode fabrication, pentacene film morphology, device characteristics, and summary of all devices.
24. S. Shekhar, P. Stokes, and S. I. Khondaker, ACS Nano 5, 1739 (2011). 10.1021/nn102305z
25. P. Stokes and S. Khondaker, J. Vac. Sci. Technol. B 28, C6B7 (2010). 10.1116/1.3501347
26. B. K. Sarker, M. R. Islam, F. Alzubi, and S. I. Khondaker, Mater. Express 1, 80 (2011). 10.1166/mex.2011.1011