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Volumn 28, Issue 12, 2013, Pages

Investigation of the temperature dependent efficiency droop in UV LEDs

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERISTIC TEMPERATURE; EXTERNAL QUANTUM EFFICIENCY; HIGH CURRENT DENSITIES; NEAR-ULTRAVIOLET LIGHT-EMITTING DIODE; SHOCKLEY-READ-HALL RECOMBINATIONS; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT BEHAVIOR; TEMPERATURE SENSITIVE;

EID: 84888582145     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/28/12/125021     Document Type: Article
Times cited : (21)

References (11)
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    • Chhajed S, Cho J, Schubert E F, Kim J K, Koleske D D and Crawford M H 2011 Temperature-dependent light-output characteristics of GaInN light-emitting diodes with different dislocation densities Phys. Status Solidi a 208 947-50
    • (2011) Phys. Status Solidi , vol.208 , pp. 947-950
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  • 2
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    • On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes
    • 10.1063/1.3618673 041112
    • Meyaard D S, Shan Q, Dai Q, Cho J, Schubert E F, Kim M-H and Sone C 2011 On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes Appl. Phys. Lett. 99 041112
    • (2011) Appl. Phys. Lett. , vol.99
    • Meyaard, D.S.1    Shan, Q.2    Dai, Q.3    Cho, J.4    Schubert, E.F.5    Kim, M.-H.6    Sone, C.7
  • 5
    • 33646237798 scopus 로고    scopus 로고
    • Temperature-dependent electroluminescence of AlGaN-based UV LEDs
    • 10.1109/LED.2006.873763 0741-3106
    • Cao X A, LeBoeuf S F and Stecher T E 2006 Temperature-dependent electroluminescence of AlGaN-based UV LEDs IEEE Electron Device Lett. 27 329-31
    • (2006) IEEE Electron Device Lett. , vol.27 , pp. 329-331
    • Cao, X.A.1    Leboeuf, S.F.2    Stecher, T.E.3
  • 6
    • 1342308183 scopus 로고    scopus 로고
    • Temperature dependence of performance of InGaN/GaN MQW LEDs with different indium compositions
    • 10.1109/LED.2003.822659 0741-3106
    • Huh C, Schaff W J, Eastman L F and Park S-J 2004 Temperature dependence of performance of InGaN/GaN MQW LEDs with different indium compositions IEEE Electron Device Lett. 25 61-3
    • (2004) IEEE Electron Device Lett. , vol.25 , pp. 61-63
    • Huh, C.1    Schaff, W.J.2    Eastman, L.F.3    Park, S.-J.4
  • 7
    • 49749207818 scopus 로고
    • Comparison of dislocation densities of primary and secondary recrystallization grains of Si-Fe
    • 10.1016/0001-6160(57)90122-0 0001-6160
    • Dunn C G and Kogh E F 1957 Comparison of dislocation densities of primary and secondary recrystallization grains of Si-Fe Acta Metall. 5 548-54
    • (1957) Acta Metall. , vol.5 , pp. 548-554
    • Dunn, C.G.1    Kogh, E.F.2
  • 9
    • 77749243748 scopus 로고    scopus 로고
    • Emission characteristics of InGaN multi quantum well light emitting diodes with differently strained InAlGaN barriers
    • 10.1002/pssc.200880895 1610-1634 c
    • Kolbe T, Knauer A, Wenzel H, Einfeldt S, Kueller V, Vogt P, Weyers M and Kneissl M 2009 Emission characteristics of InGaN multi quantum well light emitting diodes with differently strained InAlGaN barriers Phys. Status Solidi c 6 S889-92
    • (2009) Phys. Status Solidi , vol.6
    • Kolbe, T.1    Knauer, A.2    Wenzel, H.3    Einfeldt, S.4    Kueller, V.5    Vogt, P.6    Weyers, M.7    Kneissl, M.8
  • 10
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    • Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes
    • DOI 10.1063/1.2930686
    • Knauer A, Wenzel H, Kolbe T, Einfeldt S, Weyers M, Kneissl M and Tränkle G 2008 Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes Appl. Phys. Lett. 92 191912 (Pubitemid 351713430)
    • (2008) Applied Physics Letters , vol.92 , Issue.19 , pp. 191912
    • Knauer, A.1    Wenzel, H.2    Kolbe, T.3    Einfeldt, S.4    Weyers, M.5    Kneissl, M.6    Trankle, G.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.