Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells

Solar Energy Materials and Solar Cells

Volumn 120, Issue PART A, 2014, Pages 376-382

  Smit, S ^a   Garcia Alonso, D ^a   Bordihn, S ^a,b   Hanssen, M S ^a   Kessels, W M M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b HANWHA Q CELLS GMBH   (Germany)

Author keywords

Atomic layer deposition; c Si solarcells; Heterojunctions; Metal oxides; Passivation; Tunneling

Indexed keywords

CHARGE TRANSPORT MECHANISMS; CRYSTALLINE SILICON SOLAR CELLS; CRYSTALLINE SILICONS; HYDROGENATED AMORPHOUS SILICON (A-SI:H); METAL OXIDES; NEGATIVE FIXED CHARGE; SURFACE RECOMBINATION VELOCITIES; TUNNELING RECOMBINATION;

ATOMIC LAYER DEPOSITION; CONTACT RESISTANCE; DIELECTRIC PROPERTIES; ELECTRON TUNNELING; HETEROJUNCTIONS; PASSIVATION; SEMICONDUCTOR DOPING; SILICON; SILICON SOLAR CELLS;

ALUMINUM;

EID: 84888369875     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2013.06.016     Document Type: Article

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