Evaluation of implantation annealing for highly-doped selective boron emitters suitable for screen-printed contacts

Solar Energy Materials and Solar Cells

Volumn 120, Issue PART A, 2014, Pages 431-435

  Müller, Ralph ^a   Benick, Jan ^a   Bateman, Nicholas ^b   Schön, Jonas ^a   Reichel, Christian ^a   Richter, Armin ^a   Hermle, Martin ^a   Glunz, Stefan W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b APPLIED MATERIALS INC   (United States)

Author keywords

Annealing; Ion implantation; n Type; Selective emitter; Silicon solar cells

Indexed keywords

EMITTER SATURATION CURRENT DENSITY; HIGH-DOSE IMPLANTATION; INDUSTRIAL SOLAR CELLS; METALLIZATION TECHNIQUES; N-TYPE; SELECTIVE EMITTERS; SOLAR CELL PROCESSING; SURFACE CONCENTRATION;

ANNEALING; METALLIZING; PASSIVATION; SCREEN PRINTING; SILICON SOLAR CELLS;

ION IMPLANTATION;

EID: 84888368608     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2013.06.040     Document Type: Article

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