Temperature dependence of photocapacitance spectrum of CIGS thin-film solar cell

Thin Solid Films

Volumn 517, Issue 7, 2009, Pages 2403-2406

  Sakurai, T ^a   Uehigashi, H ^a   Islam, M M ^a   Miyazaki, T ^a   Ishizuka, S ^b   Sakurai, K ^b   Yamada, A ^b   Matsubara, K ^b   Niki, S ^b   Akimoto, K ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Configuration coordinate; Cu(In,Ga)Se2; Defect state; Photocapacitance spectroscopy; Solar cell

Indexed keywords

ACTIVATION ENERGY; COPPER; DEFECTS; GALLIUM; OPTICAL TRANSITIONS; PHOTOVOLTAIC CELLS; QUENCHING; SEMICONDUCTOR QUANTUM DOTS; SOLAR CELLS; SOLAR EQUIPMENT; THIN FILM DEVICES;

CONFIGURATION COORDINATE; CU(IN,GA)SE2; DEFECT STATE; PHOTOCAPACITANCE SPECTROSCOPY; SOLAR CELL;

SOLAR ENERGY;

EID: 58949085482     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.11.051     Document Type: Article

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