Electronic properties of Cu(In,Ga)Se 2 solar cells on stainless steel foils without diffusion barrier

Progress in Photovoltaics: Research and Applications

Volumn 20, Issue 3, 2012, Pages 253-259

  Pianezzi, F ^a   Chirila A ^a   Blosch P ^a   Seyrling, S ^a   Buecheler, S ^a   Kranz, L ^a   Fella, C ^a   Tiwari, A N ^a  

^a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

Author keywords

admittance spectroscopy; CIGS; Cu(In,Ga)Se2; flexible; stainless steel; thin film solar cell

Indexed keywords

ADMITTANCE SPECTROSCOPIES; CIGS; CU(IN , GA)SE2; FLEXIBLE; THIN FILM SOLAR CELLS;

DIFFUSION BARRIERS; EFFICIENCY; ELECTRIC ADMITTANCE; ELECTRONIC PROPERTIES; GALLIUM ALLOYS; MANUFACTURE; NITRIDES; SELENIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; STAINLESS STEEL; TRANSPORT PROPERTIES;

SUBSTRATES;

EID: 84857781318     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1247     Document Type: Article

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