Junction effect on transport properties of a single Si nanowire metal-semiconductor-metal device

IEEE Transactions on Nanotechnology

Volumn 12, Issue 6, 2013, Pages 1089-1093

  Samanta, Sudeshna ^a   Das, K ^a   Raychaudhuri, A K ^a  

^a S N BOSE NATIONAL CENTRE FOR BASIC SCIENCES   (India)

Author keywords

Electrical transport and impedance spectroscopy; Metal semiconductor metal (MSM) device; Single Si nanowire

Indexed keywords

ELECTRICAL TRANSPORT PROPERTIES; IMPEDANCE SPECTROSCOPY; JUNCTION EFFECTS; METAL-SEMICONDUCTOR-METAL DEVICES; SI NANOWIRE; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TEMPERATURE VARIATION;

ELECTRIC PROPERTIES; NANOWIRES; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SILICON; SPECTROSCOPY; TEMPERATURE DISTRIBUTION; TRANSPORT PROPERTIES;

METALS;

EID: 84888189580     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2013.2279838     Document Type: Article

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