-
1
-
-
0142229525
-
Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure
-
Jeong IS, Kim JH, Im S. Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure. Appl Phys Lett 2003; 83: 2946.
-
(2003)
Appl Phys Lett
, vol.83
, pp. 2946
-
-
Jeong, I.S.1
Kim, J.H.2
Im, S.3
-
2
-
-
63049135481
-
Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si
-
Zhang TC, Guo Y, Mei ZX, Gu CZ, Du XL. Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si. Appl Phys Lett 2009; 94: 113508.
-
(2009)
Appl Phys Lett
, vol.94
, pp. 113508
-
-
Zhang, T.C.1
Guo, Y.2
Mei, Z.X.3
Gu, C.Z.4
Du, X.L.5
-
3
-
-
34247844469
-
Ultraviolet and visible photoresponse properties of n-ZnO/p-Si heterojunction
-
Mridha S, Basak D. Ultraviolet and visible photoresponse properties of n-ZnO/p-Si heterojunction. J Appl Phys 2007; 101: 083102.
-
(2007)
J Appl Phys
, vol.101
, pp. 083102
-
-
Mridha, S.1
Basak, D.2
-
4
-
-
51849147424
-
Current-voltage characteristics and transport mechanism of solar cells based on ZnO nanorods/In2S3/CuSCN
-
Dittrich T, Kieven D, Rusu M, et al. Current-voltage characteristics and transport mechanism of solar cells based on ZnO nanorods/In2S3/CuSCN. Appl Phys Lett 2008; 93: 053113.
-
(2008)
Appl Phys Lett
, vol.93
, pp. 053113
-
-
Dittrich, T.1
Kieven, D.2
Rusu, M.3
-
5
-
-
18844369039
-
ZnO/CdTe/CuSCN, a promising heterostructure to act as inorganic eta-solar cell
-
Tena-Zaera R, Katty A, Bastide S, Lévy-Clément C, O'Regan B, Muñoz-Sanjosé V. ZnO/CdTe/CuSCN, a promising heterostructure to act as inorganic eta-solar cell. Thin Solid Films 2005; 483: 372-7.
-
(2005)
Thin Solid Films
, vol.483
, pp. 372-377
-
-
Tena-Zaera, R.1
Katty, A.2
Bastide, S.3
Lévy-Clément, C.4
O'Regan, B.5
Muñoz-Sanjosé, V.6
-
6
-
-
44149115381
-
Electrochemical deposition characteristics of p-CuSCN on n-ZnO rod arrays films
-
Yong Ni, Zhengguo Jin, Ke Yu, Yanan Fu, Tongjun Liu, Tao Wang. Electrochemical deposition characteristics of p-CuSCN on n-ZnO rod arrays films. Electrochim Acta 2008; 53: 6048-54.
-
(2008)
Electrochim Acta
, vol.53
, pp. 6048-6054
-
-
Ni, Y.1
Jin, Z.2
Yu, K.3
Fu, Y.4
Liu, T.5
Wang, T.6
-
7
-
-
69549118319
-
Electrochemically superfilling of n-type ZnO nanorod arrays with p-type CuSCN semiconductor
-
Weibing W, Shougang C, Changhong Y, Guangda H, Haitao W. Electrochemically superfilling of n-type ZnO nanorod arrays with p-type CuSCN semiconductor. Electrochem Commun 2009; 11: 1736-9.
-
(2009)
Electrochem Commun
, vol.11
, pp. 1736-1739
-
-
Weibing, W.1
Shougang, C.2
Changhong, Y.3
Guangda, H.4
Haitao, W.5
-
8
-
-
58149216481
-
Hybrid flexible vertical nanoscale diodes prepared at low temperature in large area
-
Aé L, Chen J, Lux-Steiner MC. Hybrid flexible vertical nanoscale diodes prepared at low temperature in large area. Nanotechnology 2008; 19: 475201.
-
(2008)
Nanotechnology
, vol.19
, pp. 475201
-
-
Aé, L.1
Chen, J.2
Lux-Steiner, M.C.3
-
9
-
-
77953127794
-
n-ZnO nanorods/p-CuSCN heterojunction lightemitting diodes fabricated by electrochemical method
-
Qiaobao Z, Honghui G, Zengfang F, Lingling L, Jianzhang Z, Zhonghua L. n-ZnO nanorods/p-CuSCN heterojunction lightemitting diodes fabricated by electrochemical method. Electrochim Acta 2010; 55: 4889-94.
-
(2010)
Electrochim Acta
, vol.55
, pp. 4889-4894
-
-
Qiaobao, Z.1
Honghui, G.2
Zengfang, F.3
Lingling, L.4
Jianzhang, Z.5
Zhonghua, L.6
-
10
-
-
17644438278
-
Lux-Steiner MC Wide band gap p-type windows by CBD and SILAR methods
-
Sankapal BR, Goncalves E, Ennaoui A, Lux-Steiner MC Wide band gap p-type windows by CBD and SILAR methods. Thin Solid Films 2004; 451-452: 128-32.
-
(2004)
Thin Solid Films
, vol.451-452
, pp. 128-132
-
-
Sankapal, B.R.1
Goncalves, E.2
Ennaoui, A.3
-
11
-
-
65649117318
-
Growth and electrical properties of ZnO films prepared by chemical bath deposition method
-
Chu DW, Hamada T, Kato K, Masuda Y. Growth and electrical properties of ZnO films prepared by chemical bath deposition method. Phys Status Solid A 2009; 206: 718-23.
-
(2009)
Phys Status Solid A
, vol.206
, pp. 718-723
-
-
Chu, D.W.1
Hamada, T.2
Kato, K.3
Masuda, Y.4
-
12
-
-
1342302490
-
n-ZnO/p-Si UV photodetectors employing AlOx films for antireflection
-
Jeong IS, Kim JH, Park H. n-ZnO/p-Si UV photodetectors employing AlOx films for antireflection. Thin Solid Films 2004; 447-448: 111-4.
-
(2004)
Thin Solid Films
, vol.447-448
, pp. 111-114
-
-
Jeong, I.S.1
Kim, J.H.2
Park, H.3
-
13
-
-
0033726442
-
Luminescent properties of ZnO thin films grown epitaxially on Si substrate
-
Miyake A, Kominami H, Tatsuoka H. Luminescent properties of ZnO thin films grown epitaxially on Si substrate. J Cryst Growth 2000; 214/215: 294-8.
-
(2000)
J Cryst Growth
, vol.214-215
, pp. 294-298
-
-
Miyake, A.1
Kominami, H.2
Tatsuoka, H.3
-
14
-
-
44449125818
-
p-ZnO/n-Si heterojunction: Sol-gel fabrication, photoresponse properties, and transport mechanism
-
Dutta M, Basak D. p-ZnO/n-Si heterojunction: Sol-gel fabrication, photoresponse properties, and transport mechanism. Appl Phys Lett 2008; 92: 212112.
-
(2008)
Appl Phys Lett
, vol.92
, pp. 212112
-
-
Dutta, M.1
Basak, D.2
-
15
-
-
67649497844
-
The effect of postannealing on the electrical properties of well-aligned n-ZnO nanorods/p-Si heterojunction
-
Liu S, Chen T, Jiang Y. The effect of postannealing on the electrical properties of well-aligned n-ZnO nanorods/p-Si heterojunction. J Appl Phys 2009; 105: 114504.
-
(2009)
J Appl Phys
, vol.105
, pp. 114504
-
-
Liu, S.1
Chen, T.2
Jiang, Y.3
-
16
-
-
0033706497
-
ZnO growth on Si by radical source MBE
-
Iwata K, Fons P, Niki S. ZnO growth on Si by radical source MBE. J Cryst Growth 2000; 214/215: 50-4.
-
(2000)
J Cryst Growth
, vol.214-215
, pp. 50-54
-
-
Iwata, K.1
Fons, P.2
Niki, S.3
|