High stable dielectric permittivity and low dielectric loss in sol-gel derived BiFeO3 thin films

Ceramics International

Volumn 40, Issue 1 PART B, 2014, Pages 2489-2493

  Ren, Yinjuan ^a   Zhu, Xiaohong ^a   Zhang, Caiyun ^a   Zhu, Jiliang ^a   Zhu, Jianguo ^a   Xiao, Dingquan ^a  

^a SICHUAN UNIVERSITY   (China)

Author keywords

A. Sol gel; C. Dielectric properties; Microstructure; Thin films

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; DIELECTRIC DEVICES; DIELECTRIC LOSSES; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC FIELDS; FERROELECTRIC FILMS; FERROELECTRIC MATERIALS; IRON COMPOUNDS; MICROSTRUCTURE; PERMITTIVITY; PEROVSKITE; SCANNING ELECTRON MICROSCOPY; SOL-GEL PROCESS; SOL-GELS; X RAY DIFFRACTION;

ANNEALING TEMPERATURES; BIFEO3 THIN FILM; DIELECTRIC PERMITTIVITIES; HIGH DIELECTRICS; IMPEDANCE ANALYSER; LOW DIELECTRIC LOSS; PHASE FORMATIONS; SOL-GEL SPIN COATING METHOD;

THIN FILMS;

EID: 84888013100     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2013.07.051     Document Type: Article

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