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Thin Solid Films

Volumn 519, Issue 15, 2011, Pages 4793-4797

Structural and electrical properties of BiFeO3 thin films by solution deposition and microwave annealing

(2) Huang, A a Shannigrahi, S R a

a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

BiFeO3 films; Ferroelectric; Leakage current; Microwave annealing; Sol gel

Indexed keywords

ANNEALING CONDITION; BFO FILMS; BIFEO3 FILMS; CHEMICAL SOLUTION DEPOSITION METHOD; COERCIVE FIELD; CONVENTIONAL ANNEALING; DIELECTRIC CONSTANTS; FERROELECTRIC; GRAIN SIZE; LEAD-FREE; LOW-LEAKAGE CURRENT; MICROWAVE ANNEALING; MICROWAVE FURNACE; MULTIMODES; POLYCRYSTALLINE BIFEO; PREFERRED ORIENTATIONS; SOLUTION DEPOSITION; STRUCTURAL AND ELECTRICAL PROPERTIES;

BISMUTH COMPOUNDS; DEPOSITION; ELECTRIC PROPERTIES; MICROWAVE HEATING; MICROWAVES; THIN FILMS; VAPOR DEPOSITION;

ANNEALING;

EID: 79957650637 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.01.076 Document Type: Conference Paper

Times cited : (12)

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