Integration of BiFeO3 thin films on Si wafer via a simple sol-gel method

Thin Solid Films

Volumn 517, Issue 15, 2009, Pages 4484-4487

  Wang, Yao ^a   Nan, Ce Wen ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

BiFeO3 thin films; C V characteristics; Magnetic

Indexed keywords

BFO FILMS; BIFEO3 THIN FILMS; C-V CHARACTERISTICS; CAPACITANCE-VOLTAGE HYSTERESIS; FERROELECTRIC DOMAINS; HIGH QUALITIES; MAGNETIC; SEEDING TECHNIQUES; SI (100) SUBSTRATES; SI SUBSTRATES; SI WAFERS; SOL-GEL METHODS; SWITCHABLE;

FERROELECTRIC FILMS; FERROELECTRICITY; GELATION; GELS; SEMICONDUCTING BISMUTH COMPOUNDS; SILICON; SILICON WAFERS; SOL-GEL PROCESS; SOL-GELS; SOLS; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 65449117922     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.142     Document Type: Article

References (18)

1. Eerenstein W., Mathur N.D., and Scott J.F. Nature 442 (2006) 759
2. Kubel F., and Schmid H. Acta Crystallogr., B 46 (1990) 698
3. Kiselev S.V., Ozerov R.P., and Zhdanov G.S. Sov. Phys. Dokl. 7 (1962) 742
4. Yun K.Y., Ricinschi D., Kanashima T., and Okuyama M. Appl. Phys. Lett. 89 (2006) 192902
5. Gajek M., Bibes M., Fusil S., Bouzehouane K., Fontcuberta J., Barthélémy A., and Fert A. Nat. Mater. 6 (2007) 296
6. Wang J., Zheng H., Ma Z., Prasertchoung S., Wutting M., Droopad R., Yu J., Eisenbeiser K., and Remash R. Appl. Phys. Lett. 85 (2004) 2574
7. Chiang Y.W., and Wu J.M. Appl. Phys. Lett. 91 (2007) 142103
8. Juan P.C., Jiang J.D., Shih W.C., and Lee J.Y.M. Microelectron. Eng. 84 (2007) 2014
9. Leu C.C., Leu C.F., Chien C.H., Yang M.J., Huang R.H., Lin C.H., and Hsu F.Y. Electrochem. Solid-State Lett. 10 (2007) G25
10. Kijima T., and Matsunaga H. Jpn. J. Appl. Phys. 37 (1998) 5171
11. Yamaguchi M., Hiraki K., Homma T., and Magatomo T. Jpn. J. Appl. Phys. 39 (2000) 5512
12. Wang Y., Jiang Q.H., He H.C., and Nan C.W. Appl. Phys. Lett. 88 (2006) 142503
13. Wang Y., and Nan C.W. J. Appl. Phys. 103 (2008) 114104
14. Sosnowska I., Peterlin-Neumaier T., and Steichele E. J. Phys. C. Solid State Phys. 15 (1982) 4835
15. Park T.J., Papaefthymiou G.C., Viescas A.J., Moodenbough A.R., and Wong S.S. Nano Lett. 7 (2007) 766
16. Ederer C., and Spaldin N.A. Phys. Rev., B 71 (2005) 060401
17. Rana D.S., Takahashi K., Mavani K.R., Kawayama I., Murakami H., Tonouchi M., Yanagida T., Tanaka H., and Kawai T. Phys. Rev., B 75 (2007) 060405
18. Pabst G.W., Martin L.W., Chu Y.H., and Ramesh R. Appl. Phys. Lett. 90 (2007) 072902