Passivation of black silicon boron emitters with atomic layer deposited aluminum oxide

Physica Status Solidi - Rapid Research Letters

Volumn 7, Issue 11, 2013, Pages 950-954

  Repo, Päivikki ^a   Benick, Jan ^b   Gastrow, Guillaume von ^a   Vähänissi, Ville ^a   Heinz, Friedemann D ^b   Schön, Jonas ^b   Schubert, Martin C ^b   Savin, Hele ^a  

^a AALTO UNIVERSITY   (Finland)

^b FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Al2O3; Black silicon; Boron diffusion; Surface passivation

Indexed keywords

ATOMIC LAYER DEPOSITED; BLACK SILICON; BORON DIFFUSIONS; CRYSTALLINE SILICON SOLAR CELLS; EMITTER SATURATION CURRENT DENSITY; NANOSTRUCTURED SURFACE; SURFACE PASSIVATION; SURFACE RECOMBINATIONS;

ATOMIC LAYER DEPOSITION; PASSIVATION; REFLECTION; SILICON SOLAR CELLS;

SILICON;

EID: 84887989873     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201308096     Document Type: Article

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