Effective passivation of black silicon surfaces by atomic layer deposition

IEEE Journal of Photovoltaics

Volumn 3, Issue 1, 2013, Pages 90-94

  Repo, Päivikki ^a   Haarahiltunen, Antti ^a   Sainiemi, Lauri ^b,c   Yli Koski, Marko ^a   Talvitie, Heli ^a   Schubert, Martin C ^d   Savin, Hele ^a  

^a AALTO UNIVERSITY   (Finland)

^b UNIVERSITY OF HELSINKI   (Finland)

^c MICROSOFT   (United States)

^d FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Aluminum oxide; atomic layer deposition (ALD); black silicon (b Si); nanostructures

Indexed keywords

ALUMINUM OXIDES; ATOMIC LAYER; BLACK SILICON; CHARGE-CARRIER TRANSPORT; DEVICE OPERATIONS; HIGH-EFFICIENCY SOLAR CELLS; HIGH-SENSITIVITY; LIGHT RESPONSE; NANOSTRUCTURED SURFACE; PHOTOVOLTAIC APPLICATIONS; SILICON NANOSTRUCTURES; SURFACE PASSIVATION;

NANOSTRUCTURES; SILICON; TRANSPORT PROPERTIES;

ATOMIC LAYER DEPOSITION;

EID: 84871764473     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2012.2210031     Document Type: Article

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