Patterning of CMOS device structures for 40-80nm pitches and beyond

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8328, Issue , 2012, Pages

  Engelmann, S U ^a   Martin, R ^a   Bruce, R L ^a   Miyazoe, H ^a   Fuller, N C M ^a   Graham, W S ^a   Sikorski, E M ^a   Glodde, M ^a   Brink, M ^a   Tsai, H ^a   Bucchignano, J ^a   Klaus, D ^a   Kratschmer, E ^a   Guillorn, M A ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

directed self assembly; mask deformation; nonplanar devices; pattern transfer; plasma etch; trilayer

Indexed keywords

DIRECTED SELF-ASSEMBLY; NON-PLANAR DEVICES; PATTERN TRANSFERS; PLASMA ETCH; TRI LAYERS;

FAILURE (MECHANICAL); OPTIMIZATION;

CMOS INTEGRATED CIRCUITS;

EID: 84870317054     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.916447     Document Type: Conference Paper

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