On the possibility of sub 60 mV/decade subthreshold switching in piezoelectric gate barrier transistors

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 10, Issue 11, 2013, Pages 1469-1472

  Jana, Raj K ^a   Snider, Gregory L ^a   Jena, Debdeep ^a  

^a University of Notre Dame   (United States)

Author keywords

Electrostriction; Negative differential capacitance; Subthreshold slope; Surface potential

Indexed keywords

BOLTZMANN; DIFFERENTIAL CAPACITANCE; ELECTRIC FIELD INDUCED; GATE VOLTAGES; INTERNAL VOLTAGE; ROOM TEMPERATURE; SUBTHRESHOLD; SUBTHRESHOLD SLOPE;

CAPACITANCE; ELECTRIC FIELDS; ELECTROSTRICTION; FIELD EFFECT TRANSISTORS; PIEZOELECTRICITY;

SURFACE POTENTIAL;

EID: 84887625662     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201300280     Document Type: Article

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