A surface-potential based compact model for GaN HEMTs incorporating polarization charges

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2012, Pages 147-148

  Jana, Raj ^a   Jena, Debdeep ^a  

^a UNIVERSITY OF NOTRE DAME   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL EQUATIONS; COMPACT MODEL; COMPACT MODELING; DEVELOPED MODEL; DEVICE OPERATIONS; DIRAC-DELTA; FIELD-DEPENDENT MOBILITY; GAN HEMTS; HETEROSTRUCTURE INTERFACES; HIGH DENSITY; HIGH-SPEED; HIGH-VOLTAGES; III-NITRIDE SEMICONDUCTORS; INTRINSIC MODEL; MATERIAL PROPERTY; MICROWAVE APPLICATIONS; POLARIZATION CHARGES; SHEET CHARGES; SURFACE POTENTIAL-BASED; SYSTEMATIC DESIGNS; VELOCITY SATURATION;

DELTA FUNCTIONS; GALLIUM NITRIDE; HETEROJUNCTIONS; POISSON EQUATION; POLARIZATION; SURFACE POTENTIAL; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84866926739     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2012.6257018     Document Type: Conference Paper

References (4)

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3. Langevelde et al., Physical background of MOS model 11, 2003/00239
4. Nassar et al., IEEE Trans. on Electron Dev., 56, 1974 (2009).