Fast atom beam activated wafer bonds between n-Si and n-GaAs with low resistance

ECS Journal of Solid State Science and Technology

Volumn 2, Issue 9, 2013, Pages

  Essig, S ^a   Dimroth, F ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84887374810     PISSN: 21628769     EISSN: 21628777     Source Type: Journal    
DOI: 10.1149/2.031309jss     Document Type: Article

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