Electrical isolation in GaAs by light ion irradiation: The role of antisite defects

Applied Physics Letters

Volumn 68, Issue 4, 1996, Pages 535-537

  De Souza, J P ^a   Danilov, I ^a   Boudinov, H ^a  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001133352     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116391     Document Type: Article

References (9)

1. S. J. Pearton, Mater. Sci. Rep. 4, 313 (1990).
2. D. V. Morgan, F. H. Eisen, and A. Ezis, IEE Proc. 128, 109 (1981).
3. K. T. Short and S. J. Pearton, J. Electrochem. Soc. INS 135, 2835 (1988).
4. D. C. D'Avanzo, IEEE Trans. Electron Devices INS ED-29, 1051 (1982).
5. P. N. Favennec, J. Appl. Phys. AIP 47, 2532 (1976).
6. J. P. de Souza and D. K. Sadana, Mater. Res. Soc. Symp. Proc. INS 240, 887 (1991).
7. L. J. Van der Pauw, Phillips Res. Rep. INS 13, 1 (1958).
8. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, Oxford, 1985), Vol. 1.
9. J. W. Corbett and J. C. Bourgoin, in Point Defects in Solids, edited by J. H. Crawford and L. M. Slifkin (Plenum, New York, 1975), p. 118.