Electronic transition and electrical transport properties of delafossite CuCr1-xMgxO2 (0 ≤ x ≤ 12%) films prepared by the sol-gel method: A composition dependence study

Journal of Applied Physics

Volumn 114, Issue 16, 2013, Pages

  Han, M J ^a   Duan, Z H ^a   Zhang, J Z ^a   Zhang, S ^a   Li, Y W ^a   Hu, Z G ^a   Chu, J H ^a  

^a EAST CHINA NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP RENORMALIZATION; COMPOSITION DEPENDENCE; ELECTRICAL CONDUCTIVITY; ELECTRICAL TRANSPORT PROPERTIES; PREFERRED ORIENTATIONS; SPECTRAL TRANSMITTANCE; TEMPERATURE DEPENDENT; VARIABLE RANGE HOPPING;

CHROMIUM COMPOUNDS; ELECTRIC CONDUCTIVITY; OPTICAL BAND GAPS; OPTOELECTRONIC DEVICES; SAPPHIRE; SEMICONDUCTOR DOPING; SOL-GEL PROCESS; TRANSPORT PROPERTIES;

FILM PREPARATION;

EID: 84887279162     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4827856     Document Type: Article

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