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Volumn 125, Issue 3-4, 2003, Pages 175-178

Changes induced by the presence of Zn or Ni impurity at Cu sites in CuAlO2 delafossite

Author keywords

A. Semiconductors; C. Impurities in semiconductors; D. Electronic band structure; D. Hyperfine interactions

Indexed keywords

DOPING (ADDITIVES); ELECTRIC FIELDS; ELECTRONIC STRUCTURE; ENERGY GAP;

EID: 0037218772     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(02)00762-7     Document Type: Article
Times cited : (26)

References (14)
  • 10
    • 0025446594 scopus 로고    scopus 로고
    • Blaha P., Schwarz K., Luitz J. Schwarz K. WIEN97, A Full Potential Linearized Augmented Plane Wave Package for Calculating Crystal Properties. 1999;Tech. Univ. Wien, Vienna. ISBN 3-9501031-0-4. Updated version of P. Blaha, K. Schwarz, P. Sorantinand, S.B.Trickey, Comp. Phys. Commun. 59 (1990) 399.
    • (1990) Comp. Phys. Commun. , vol.59 , pp. 399
    • Blaha, P.1    Schwarz, K.2    Sorantinand, P.3    Trickey, S.B.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.