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Journal of Materials Chemistry

Volumn 20, Issue 31, 2010, Pages 6562-6570

Structural and physical effects of Mg-doping on p-type CuCrO2 and CuAl0.5Cr0.5O2 thin films

(3) Bywalez, Robert a Götzendörfer, Stefan a,b Löbmann, Peer a

a FRAUNHOFER INSTITUTE FOR SILICATE RESEARCH ISC (Germany)

b UNIVERSITY OF WÜRZBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCEDURES; BAND GAPS; CHARGE CARRIER DENSITY; CUCRO; DELAFOSSITE STRUCTURE; DELAFOSSITES; DOPANT CONCENTRATIONS; IMPURITIES IN; INTRINSIC DOPING; MG-DOPING; NATIVE DEFECT; ORDERS OF MAGNITUDE; P-TYPE; P-TYPE CONDUCTIVITY; PHASE DEVELOPMENT; PHYSICAL EFFECTS; SEEBECK; SOL-GEL PROCESSING; SPINEL PHASIS; SYSTEMATIC VARIATION; THERMAL DECOMPOSITIONS;

CARRIER CONCENTRATION; COPPER COMPOUNDS; GELS; MAGNESIUM; PROFITABILITY; PYROLYSIS; SEMICONDUCTOR DOPING; SOL-GEL PROCESS; THIN FILMS; X RAY DIFFRACTION;

CHROMIUM;

EID: 77955001787 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/b926424h Document Type: Article

Times cited : (53)

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