SCOPUS 정보 검색 플랫폼

Volumn 22, Issue 35, 2012, Pages 18463-18470

Structural, electronic band transition and optoelectronic properties of delafossite CuGa 1-xCr xO 2 (0 ≤ x ≤ 1) solid solution films grown by the sol-gel method

(7) Han, Meijie a Jiang, Kai a Zhang, Jinzhong a Yu, Wenlei a Li, Yawei a Hu, Zhigao a Chu, Junhao a

a EAST CHINA NORMAL UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT ENERGY LEVEL; DELAFOSSITES; DIRECT BAND GAP; ELECTRICAL CONDUCTIVITY; ELECTRONIC BAND; INTERATOMIC POTENTIAL; INTERNAL STRUCTURE; LOWER FREQUENCIES; OPTOELECTRONIC PROPERTIES; PEAK POSITION; PHONON MODE; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; SOLID SOLUTION FILM; THERMAL ACTIVATION ENERGIES; VIBRATION MODES; VISIBLE REGION;

ACTIVATION ENERGY; COPPER COMPOUNDS; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; PHOTOELECTRONS; RAMAN SPECTROSCOPY; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SOL-GEL PROCESS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

COPPER;

EID: 84865045557 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c2jm33027j Document Type: Article

Times cited : (65)

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