ZnO nanoneedle/H2O solid-liquid heterojunctionbased self-powered ultraviolet detector

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-7

  Li, Qinghao ^a   Wei, Lin ^a   Xie, Yanru ^a   Zhang, Kai ^a   Liu, Lei ^a   Zhu, Dapeng ^a   Jiao, Jun ^b,c   Chen, Yanxue ^a   Yan, Shishen ^a   Liu, Guolei ^a   Mei, Liangmo ^a  

^a SHANDONG UNIVERSITY   (China)

^b Portland State University   (United States)

^c PORTLAND STATE UNIVERSITY   (United States)

Author keywords

Hydrothermal method; Solid liquid; Ultraviolet photodetector; ZnO nanoneedle arrays

Indexed keywords

ELECTROLYTES; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; LIQUIDS; NANOCOMPOSITES; NANONEEDLES; PHOTODETECTORS; PHOTOELECTROCHEMICAL CELLS; PHOTONS; PHOTOVOLTAIC EFFECTS; TEMPERATURE; TIN OXIDES; ZINC OXIDE;

FLUORINE DOPED TIN OXIDE; HYDROTHERMAL METHODS; SHORT-CIRCUIT PHOTOCURRENT; SOLID-LIQUID; SPACE CHARGE LAYERS; SPECTRAL SELECTIVITY; ULTRA-VIOLET PHOTODETECTORS; ZNO NANONEEDLES;

PHASE INTERFACES;

EID: 84887273484     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-415     Document Type: Article

References (37)

1. Razeghi M, Rogalski A: Semiconductor ultraviolet detectors. J Appl Phys 1996, 79:7433.
2. Munoz E, Monroy E, Pau JL, Calle F, Omnes F, Gibart P: III nitrides and UV detection. J Phys Condens Mat 2001, 13:7115.
3. Soci C, Zhang A, Xiang B, Dayeh SA, Aplin DPR, Park J, Bao XY, Lo YH, Wang D: ZnO nanowire UV photodetectors with high internal gain. Nano Lett 2007, 7:4.
4. Lin TS, Lee CT: Performance investigation of p-i-n ZnO-based thin film homojunction ultraviolet photodetectors. Appl Phys Lett 2012, 101:221118.
5. Dutta M, Basak D: p-ZnO/n-Si heterojunction: sol-gel fabrication, photoresponse properties, and transport mechanism. Appl Phys Lett 2008, 92:212112.
6. Reyes PI, Ku CJ, Duan ZQ, Xu Y, Garfunkel E, Lu YC: Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector. Appl Phys Lett 2012, 101:031118.
7. Liu JS, Shan CX, Li BH, Zhang ZZ, Yang CL, Shen DZ, Fan XW: High responsivity ultraviolet photodetector realized via a carrier-trapping process. Appl Phys Lett 2010, 97:251102.
8. Zheng QH, Huang F, Ding K, Huang J, Chen DG, Zhan ZB, Lin Z: MgZnObased metal-semiconductor-metal solar-blind photodetectors on ZnO substrates. Appl Phys Lett 2011, 98:221112.
9. 0.48O thin film. Appl Phys Lett 2011, 99:242105.
10. Li M, Chokshi N, Deleon RL, Tompa G, Anderson WA: Radio frequency sputtered zinc oxide thin films with application to metal-semiconductormetal photodetectors. Thin Solid Films 2007, 515:7357.
11. Lee ML, Chi PF, Sheu JK: Photodetectors formed by an indium tin oxide/ zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-tovisible rejection ratio. Appl Phys Lett 2009, 94:013512.
12. Sun F, Shan CX, Wang SP, Li BH, Zhang ZZ, Yang CL, Shen DZ: Ultraviolet photodetectors fabricated from ZnO p-i-n homojunction structures. Mater Chem Phys 2011, 129:27.
13. Liang HL, Mei ZX, Zhang QH, Gu L, Liang S, Hou YN, Ye DQ, Gu CZ, Yu RC, Du XL: Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors. Appl Phys Lett 2011, 98:221902.
14. Mandalapu LJ, Yang Z, Xiu FX, Zhao DT, Liu JL: Homojunction photodiodes based on Sb-doped p-type ZnO for ultraviolet detection. Appl Phys Lett 2006, 88:092103.
15. Endo H, Sugibuchi M, Takahashi K, Goto S, Sugimura S, Hane K, Kashiwaba Y: Schottky ultraviolet photodiode using a ZnO hydrothermally grown single crystal substrate. Appl Phys Lett 2007, 90:121906.
16. 0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain. Appl Phys Lett 2011, 98:103506.
17. Nakano M, Makino T, Tsukazaki A, Ueno K, Ohtomo A, Fukumura T, Yuji H, Akasaka S, Tamura K, Nakahara K, Tanabe T, Kamisawa A, Kawasaki M: Transparent polymer Schottky contact for a high performance visibleblind ultraviolet photodiode based on ZnO. Appl Phys Lett 2008, 93:123309.
18. Fu XW, Liao ZM, Zhou YB, Wu HC, Bie YQ, Xu J, Yu DP: Graphene/ZnO nanowire/graphene vertical structure based fast-response ultraviolet photodetector. Appl Phys Lett 2012, 100:223114.
19. Cheng G, Wu XH, Liu B, Li B, Zhang XT, Du ZL: ZnO nanowire Schottky barrier ultraviolet photodetector with high sensitivity and fast recovery speed. Appl Phys Lett 2011, 99:203105.
20. Hasan KU, Alvi NH, Lu J, Nur O, Willander M: Single nanowire-based UV photodetectors for fast switching. Nanoscale Res Lett 2011, 6:348.
21. Yang Y, Guo W, Qi JJ, Zhao J, Zhang Y: Self-powered ultraviolet photodetector based on a single Sb-doped ZnO nanobelt. Appl Phys Lett 2010, 97:223113.
22. Dai L, Yu DP, Qin ZX, Xu J, Zhou YB, Ye Y, Li GR, Zhang HZ, Liao ZM, Bie YQ: Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions. Adv Mater 2011, 23:649.
23. Zhai TY, Li L, Wang X, Fang XS, Bando Y, Golberg D: Recent developments in one-dimensional inorganic nanostructures for photodetectors. Adv Funct Mater 2010, 20:4233.
24. Bai S, Wu WW, Qin Y, Cui NY, Bayerl DJ, Wang XD: High-performance integrated ZnO nanowire UV sensors on rigid and flexible substrates. Adv Funct Mater 2011, 21:4464.
25. Hassan JJ, Mahdi MA, Kasim SJ, Ahmed NM, Hassan HA, Hassan Z: High sensitivity and fast response and recovery times in a ZnO nanorod array/p-Si self-powered ultraviolet detector. Appl Phys Lett 2012, 101:261108.
26. Ji LW, Peng SM, Su YK, Young SJ, Wu CZ, Cheng WB: Ultraviolet photodetectors based on selectively grown ZnO nanorod arrays. Appl Phys Lett 2009, 94:203106.
27. Wang ZL: Self-powered nanosensors and nanosystems. Adv Mater 2012, 24:280.
28. Lee WJ, Hon MH: An ultraviolet photo-detector based on TiO2/water solid-liquid heterojunction. Appl Phys Lett 2011, 99:251102.
29. Li XD, Gao CT, Duan HG, Lu BG, Pan XJ, Xie EQ: Nanocrystalline TiO2 film based photoelectrochemical cell as self-powered UV-photodetector. Nano Energy 2012, 1:640.
30. Gratzel M: Photoelectrochemical cells. Nature 2001, 414:338.
31. Xu S, Qin Y, Xu C, Wei YG, Yang RS, Wang ZL: Self-powered nanowire devices. Nat Nanotechnol 2010, 5:366.
32. Xie YR, Wei L, Wei GD, Li QH, Wang D, Chen YX, Yan SS, Liu GL, Mei LM, Jiao J: A self-powered UV photodetector based on TiO2 nanorod arrays. Nanoscale Res Lett 2013, 8:188.
33. Banerjee P, Lee WJ, Bae KR, Lee SB, Rubloff GW: Structural, electrical, and optical properties of atomic layer deposition Al doped ZnO films. J Appl Phys 2010, 108:043504.
34. Sernelius BE, Berggren KF, Jin ZC, Hamberg I, Granqvist CG: Band-gap tailoring of ZnO by means of heavy Al doping. Phy Rev B 1988, 37:17.
35. Wei M, Boutwell RC, Mares JW, Scheurer A, Schoenfeld WV: Bandgap engineering of sol-gel synthesized amorphous Zn1-xMgxO films. Appl Phys Lett 2011, 98:261913.
36. 1-x as a II-VI widegap semiconductor alloy. Appl Phys Lett 1998, 72:2466.
37. Ye ZY, Lu HL, Geng Y, Gu YZ, Xie ZY, Zhang Y, Sun QQ, Ding SJ, Zhang DW: Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition. Nanoscale Res Lett 2013, 8:108.