Organic pseudo-CMOS circuits for low-voltage large-gain high-speed operation

IEEE Electron Device Letters

Volumn 32, Issue 10, 2011, Pages 1448-1450

  Fukuda, Kenjiro ^a   Sekitani, Tsuyoshi ^a   Yokota, Tomoyuki ^a   Kuribara, Kazunori ^a   Huang, Tsung Ching ^a   Sakurai, Takayasu ^a   Zschieschang, Ute ^b   Klauk, Hagen ^b   Ikeda, Masaaki ^c   Kuwabara, Hirokazu ^c   Yamamoto, Tatsuya ^d   Takimiya, Kazuo ^d   Cheng, Kwang Ting ^e   Someya, Takao ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^c NIPPON KAYAKU CO LTD   (Japan)

^d HIROSHIMA UNIVERSITY   (Japan)

^e University of California   (United States)

Author keywords

Design for manufacture; logic circuits; organic materials; organic thin film transistors (TFTs)

Indexed keywords

AMPLIFIER CIRCUITS; DESIGN FOR MANUFACTURE; HIGH-SPEED OPERATION; INPUT VOLTAGES; LOW VOLTAGES; LOW-VOLTAGE; OPERATION VOLTAGE; ORGANIC CIRCUITS; ORGANIC MATERIALS; ORGANIC THIN-FILM TRANSISTORS (TFTS); ORGANIC TRANSISTOR; OSCILLATION FREQUENCY; P-TYPE; PROPAGATION DELAYS; RING OSCILLATOR; ULTRAHIGH GAIN;

CMOS INTEGRATED CIRCUITS; GATE DIELECTRICS; LOGIC CIRCUITS; MACHINE DESIGN; SELF ASSEMBLED MONOLAYERS; THIN FILM TRANSISTORS;

THIN FILM CIRCUITS;

EID: 80053570817     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2161747     Document Type: Article

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