Performance of mid-wave infrared HgCdTe e-avalanche photodiodes

Journal of Electronic Materials

Volumn 41, Issue 10, 2012, Pages 2943-2948

  Kerlain, A ^a   Bonnouvrier, G ^a   Rubaldo, L ^a   Decaens, G ^a   Reibel, Y ^a   Abraham, P ^a   Rothman, J ^b   Mollard, L ^b   De Borniol, E ^b  

^a SOFRADIR   (France)

^b CEA LETI   (France)

Author keywords

APD; Excess noise factor; FPA; Gain; Gain model; HgCdTe; Mid wave infrared

Indexed keywords

AVALANCHE PHOTODIODES; CADMIUM ALLOYS; DISPERSION (WAVES); II-VI SEMICONDUCTORS; MERCURY AMALGAMS; NARROW BAND GAP SEMICONDUCTORS; SEMICONDUCTOR ALLOYS; ZINC ALLOYS;

EXCESS NOISE FACTOR; GAIN; GAIN MODELS; HGCDTE; MID WAVE INFRARED (MWIR);

INFRARED RADIATION;

EID: 84868596222     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-012-2087-5     Document Type: Conference Paper

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