Anisotropic-strain-controlled metal-insulator transition in epitaxial NdNiO3 films grown on orthorhombic NdGaO3 substrates

Applied Physics Letters

Volumn 103, Issue 17, 2013, Pages

  Lian, X K ^a   Chen, F ^a   Tan, X L ^a   Chen, P F ^a   Wang, L F ^a   Gao, G Y ^a   Jin, S W ^b   Wu, W B ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b ANHUI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC EPITAXIAL STRAINS; BULK VALUE; DIFFERENT SUBSTRATES; LATTICE VARIATION; ORTHORHOMBIC DISTORTION;

ANISOTROPY; EPITAXIAL GROWTH; PULSED LASER DEPOSITION; SEMICONDUCTOR INSULATOR BOUNDARIES; TENSILE STRAIN;

EPITAXIAL FILMS;

EID: 84887107872     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4826678     Document Type: Article

References (32)

1. G. Catalan, Phase Transitions 81, 729 (2008). 10.1080/01411590801992463
2. M. L. Medarde, J. Phys.:Condens. Matter 9, 1679 (1997). 10.1088/0953-8984/9/8/003
3. J. A. Alonso, J. L. Garcia-Munoz, M. T. Fernandez-Diaz, M. A. G. Aranda, M. J. Martinez-Lope, and M. T. Casais, Phys. Rev. Lett. 82, 3871 (1999). 10.1103/PhysRevLett.82.3871
4. J. A. Alonso, M. J. Martinez-Lope, M. T. Casais, J. L. Garcia-Munoz, and M. T. Fernandez-Diaz, Phys. Rev. B 61, 1756 (2000). 10.1103/PhysRevB.61.1756
5. U. Staub, G. I. Meijer, F. Fauth, R. Allenspach, J. G. Bednorz, J. Karpinski, S. M. Kazakov, L. Paolasini, and F. d'Acapito, Phys. Rev. Lett. 88, 126402 (2002). 10.1103/PhysRevLett.88.126402
6. M. Imada, A. Fujimori, and Y. Tokura, Rev. Mod. Phys. 70, 1039 (1998). 10.1103/RevModPhys.70.1039
7. J. B. Torrance, P. Lacorre, A. I. Nazzal, E. J. Ansaldo, and C. Niedermayer, Phys. Rev. B 45, 8209 (1992). 10.1103/PhysRevB.45.8209
8. P. C. Canfield, J. D. Thompson, S. W. Cheong, and L. W. Rupp, Phys. Rev. B 47, 12357 (1993). 10.1103/PhysRevB.47.12357
9. X. Obradors, L. M. Paulius, M. B. Maple, J. B. Torrance, A. I. Nazzal, J. Fontcuberta, and X. Granados, Phys. Rev. B 47, 12353 (1993). 10.1103/PhysRevB.47.12353
10. M. Medarde, P. Lacorre, K. Conder, F. Fauth, and A. Furrer, Phys. Rev. Lett. 80, 2397 (1998). 10.1103/PhysRevLett.80.2397
11. G. H. Aydogdu, S. D. Ha, B. Viswanath, and S. Ramanathan, J. Appl. Phys. 109, 124110 (2011). 10.1063/1.3598055
12. G. Catalan, R. M. Bowman, and J. M. Gregg, Phys. Rev. B 62, 7892 (2000). 10.1103/PhysRevB.62.7892
13. G. Catalan, R. M. Bowman, and J. M. Gregg, J. Appl. Phys. 87, 606 (2000). 10.1063/1.371912
14. F. Conchon, A. Boulle, R. Guinebretiere, C. Girardot, S. Pignard, J. Kreisel, F. Weiss, E. Dooryhee, and J. L. Hodeau, Appl. Phys. Lett. 91, 192110 (2007). 10.1063/1.2800306
15. S. D. Ha, M. Otaki, R. Jaramillo, A. Podpirka, and S. Ramanathan, J. Solid State Chem. 190, 233 (2012). 10.1016/j.jssc.2012.02.047
16. A. Kumar, P. Singh, D. Kaur, J. Jesudasan, and P. Raychaudhuri, J. Phys. D: Appl. Phys. 39, 5310 (2006). 10.1088/0022-3727/39/24/032
17. D. Kumar, K. P. Rajeev, A. K. Kushwaha, and R. C. Budhani, J. Appl. Phys. 108, 063503 (2010). 10.1063/1.3481396
18. Y. Kumar, R. J. Choudhary, S. K. Sharma, M. Knobel, and R. Kumar, Appl. Phys. Lett. 101, 132101 (2012). 10.1063/1.4754593
19. P. Laffez, O. I. Lebedev, P. Ruello, R. Desfeux, G. Banerjee, and F. Capon, Eur. Phys. J.: Appl. Phys. 25, 25 (2004). 10.1051/epjap:2003087
20. J. Liu, M. Kareev, B. Gray, J. W. Kim, P. Ryan, B. Dabrowski, J. W. Freeland, and J. Chakhalian, Appl. Phys. Lett. 96, 233110 (2010). 10.1063/1.3451462
21. A. Tiwari, C. Jin, and J. Narayan, Appl. Phys. Lett. 80, 4039 (2002). 10.1063/1.1480475
22. M. A. Novojilov, O. Y. Gorbenko, I. E. Graboy, A. R. Kaul, H. W. Zandbergen, N. A. Babushkina, and L. M. Belova, Appl. Phys. Lett. 76, 2041 (2000). 10.1063/1.126248
23. R. Eguchi, Y. Okamoto, Z. Hiroi, S. Shin, A. Chainani, Y. Tanaka, M. Matsunami, Y. Takata, Y. Nishino, K. Tamasaku, M. Yabashi, and T. Ishikawa, J. Appl. Phys. 105, 056103 (2009). 10.1063/1.3086666
24. J. He, A. Borisevich, S. V. Kalinin, S. J. Pennycook, and S. T. Pantelides, Phys. Rev. Lett. 105, 227203 (2010). 10.1103/PhysRevLett.105.227203
25. Z. Huang, L. F. Wang, P. F. Chen, G. Y. Gao, X. L. Tan, B. W. Zhi, X. F. Xuan, and W. B. Wu, Phys. Rev. B 86, 014410 (2012). 10.1103/PhysRevB.86.014410
26. H. Boschker, M. Mathews, E. P. Houwman, H. Nishikawa, A. Vailionis, G. Koster, G. Rijnders, and D. H. A. Blank, Phys. Rev. B 79, 214425 (2009). 10.1103/PhysRevB.79.214425
27. S. Lee, R. Chen, and L. Balents, Phys. Rev. Lett. 106, 016405 (2011). 10.1103/PhysRevLett.106.016405
28. I. V. Nikulin, M. A. Novojilov, A. R. Kaul, S. N. Mudretsova, and S. V. Kondrashov, Mater. Res. Bull. 39, 775 (2004). 10.1016/j.materresbull.2004.02.005
29. J. L. García-Muñoz, J. Rodríguez-Carvajal, P. Lacorre, and J. B. Torrance, Phys. Rev. B 46, 4414 (1992). 10.1103/PhysRevB.46. 4414
30. A. Vailionis, H. Boschker, W. Siemons, E. P. Houwman, D. H. A. Blank, G. Rijnders, and G. Koster, Phys. Rev. B 83, 064101 (2011). 10.1103/PhysRevB.83. 064101
31. A. Vailionis, W. Siemons, and G. Koster, Appl. Phys. Lett. 93, 051909 (2008). 10.1063/1.2967878
32. J. Chakhalian, J. M. Rondinelli, J. Liu, B. A. Gray, M. Kareev, E. J. Moon, N. Prasai, J. L. Cohn, M. Varela, I. C. Tung, M. J. Bedzyk, S. G. Altendorf, F. Strigari, B. Dabrowski, L. H. Tjeng, P. J. Ryan, and J. W. Freeland, Phys. Rev. Lett. 107, 116805 (2011). 10.1103/PhysRevLett.107.116805