Structure and photoemission spectroscopy of strain-controlled metal-insulator transition in NdNiO3 thin films

Journal of Applied Physics

Volumn 105, Issue 5, 2009, Pages

  Eguchi, R ^a,b   Okamoto, Y ^a   Hiroi, Z ^a   Shin, S ^a,b   Chainani, A ^b   Tanaka, Y ^b   Matsunami, M ^b   Takata, Y ^b   Nishino, Y ^b   Tamasaku, K ^b   Yabashi, M ^b,c   Ishikawa, T ^b,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b RIKEN SPring 8 Center ^*  (Japan)

^c JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION SPECTROSCOPY; EPITAXIAL FILMS; INSULATION; METAL INSULATOR BOUNDARIES; PHOTOEMISSION; PULSED LASER DEPOSITION; SEMICONDUCTOR INSULATOR BOUNDARIES;

CHARGE-TRANSFER GAPS; COMPRESSIVE STRAINS; FIRST ORDERS; HARD X-RAY PHOTOEMISSIONS; IN PLANES; INSULATING PHASE; LOW TEMPERATURES; METAL-INSULATOR TRANSITIONS; OUT OF PLANES; PHOTOEMISSION SPECTROSCOPIES; PULSED-LASER DEPOSITIONS; RECIPROCAL SPACE MAPS; SINGLE-CRYSTAL SUBSTRATES; TRANSITION TEMPERATURES;

METAL INSULATOR TRANSITION;

EID: 62549091034     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3086666     Document Type: Article

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