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Physica B: Condensed Matter

Volumn 427, Issue , 2013, Pages 62-67

Dependence of electronic properties of germanium on the in-plane biaxial tensile strains

(7) Yang, C H a Yu, Z Y a Liu, Y M a Lu, P F a Gao, T b Li, M a Manzoor, S a

a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS (China)

b SICHUAN UNIVERSITY (China)

Author keywords

Ab initio; Electronic properties; Hybrid functional; In plane biaxial strain; Tensile strained Ge

Indexed keywords

ELECTRONIC PROPERTIES; ENERGY GAP; GERMANIUM; SEMICONDUCTOR DEVICES; SHEAR STRAIN; STRAIN; SUBSTRATES; VALENCE BANDS;

AB INITIO; BAND-GAP SEMICONDUCTORS; BIAXIAL STRAINS; BIAXIAL TENSILE STRAIN; DEPENDENCY RELATIONSHIP; HYBRID FUNCTIONAL; SPIN-ORBIT COUPLING EFFECTS; STRAINED-GE;

TENSILE STRAIN;

EID: 84886914175 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2013.06.015 Document Type: Article

Times cited : (19)

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