Enhanced light-extraction from hierarchical surfaces consisting of p-GaN microdomes and SiO2 nanorods for GaN-based light-emitting diodes

Applied Physics Letters

Volumn 103, Issue 16, 2013, Pages

  Ho, Cheng Han ^a   Hsiao, Yu Hsuan ^a   Lien, Der Hsien ^a   Tsai, M S ^b   Chang, Don ^c   Lai, Kun Yu ^b   Sun, Ching Cherng ^b   He, Jr Hau ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c Ubilux Optoelectronics Corporation   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GAN LIGHT-EMITTING DIODES; GAN-BASED LIGHT-EMITTING DIODES; HIERARCHICAL STRUCTURES; HIERARCHICAL SURFACES; LIGHT-EXTRACTION EFFICIENCY; OPTICAL PERFORMANCE; SOLID-STATE LIGHTING TECHNOLOGY; TOTAL INTERNAL REFLECTIONS;

FINITE DIFFERENCE TIME DOMAIN METHOD; GALLIUM NITRIDE; NANORODS; REFRACTIVE INDEX; TIME DOMAIN ANALYSIS;

LIGHT EMITTING DIODES;

EID: 84886393679     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4824848     Document Type: Article

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