Improved light extraction of GaN-based light-emitting diodes with surface-patterned ITO

Optics and Laser Technology

Volumn 41, Issue 6, 2009, Pages 823-826

  Wang, Pei ^a,b   Gan, Zhiyin ^a,b   Liu, Sheng ^a,b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Indium tin oxide; Light emitting diodes; Surface patterning

Indexed keywords

ATOMIC-FORCE MICROSCOPIES; CURRENT LAYERS; GAN-BASED LEDS; GAN-BASED LIGHT-EMITTING DIODES; HIGH-POWER; ICP ETCHINGS; INDIUM TIN OXIDE; LED CHIPS; LIGHT EXTRACTIONS; LIGHT-EXTRACTION EFFICIENCIES; LUMINANCE INTENSITIES; MICRO-STRUCTURES; PATTERNED ITO; POTENTIAL APPLICATIONS; PROCESSING PARAMETERS; SEM; SURFACE PATTERNING;

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; DIODES; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; INDUCTIVELY COUPLED PLASMA; LIGHT EMISSION; ORGANIC LIGHT EMITTING DIODES (OLED); PHOTOLITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; TIN; TITANIUM COMPOUNDS;

LIGHT EMITTING DIODES;

EID: 64849110056     PISSN: 00303992     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optlastec.2008.12.008     Document Type: Article

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