In-situ analysis on the initial growth of ultra-thin ruthenium films with atomic layer deposition

Microelectronic Engineering

Volumn 107, Issue , 2013, Pages 151-155

  Geidel, Marion ^a   Junige, Marcel ^a   Albert, Matthias ^a   Bartha, Johann W ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

ECPR; In situ AFM; In situ XPS; In vacuo AFM; In vacuo XPS; Initial growth; Initial reaction mechanism; Thermal ALD of Ru

Indexed keywords

ALUMINUM; ATOMIC FORCE MICROSCOPY; DEPOSITION; MOLECULAR OXYGEN; RUTHENIUM; SUBSTRATES; SURFACE ANALYSIS; SURFACE TOPOGRAPHY; TANTALUM COMPOUNDS; TANTALUM OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

ECPR; IN-SITU AFM; IN-SITU XPS; REACTION MECHANISM; THERMAL ALD;

ATOMIC LAYER DEPOSITION;

EID: 84886074400     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2012.08.026     Document Type: Article

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